Controllable electrical properties of metal-doped in2o 3 nanowires for high-performance enhancement-mode transistors

ACS Nano

Volumn 7, Issue 1, 2013, Pages 804-810

  Zou, Xuming ^a   Liu, Xingqiang ^a   Wang, Chunlan ^a   Jiang, Ying ^b   Wang, Yong ^b   Xiao, Xiangheng ^a   Ho, Johnny C ^c   Li, Jinchai ^a   Jiang, Changzhong ^a   Xiong, Qihua ^d   Liao, Lei ^a  

^a WUHAN UNIVERSITY   (China)

^b ZHEJIANG UNIVERSITY   (China)

^c CITY UNIVERSITY OF HONG KONG   (Hong Kong)

^d NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

controllable threshold voltage; doping; enhancement mode; field effect transistors; In2O3 nanowires

Indexed keywords

CHANNEL LENGTH; CIRCUIT INTEGRATION; DEPLETION MODES; DEVICE CHANNEL; ELECTRICAL AND OPTICAL PROPERTIES; ENHANCEMENT-MODE; FIELD-EFFECT MOBILITIES; GATE-DELAY TIME; HIGH SATURATION CURRENT; LOW POWER; METAL ELEMENTS; METAL-DOPED; MG-DOPING; ON-CURRENTS; ON/OFF RATIO; PARALLEL ARRAYS; SCALING EFFECTS; SOURCE-DRAIN CURRENT; SUBTHRESHOLD SLOPE;

DOPING (ADDITIVES); FIELD EFFECT TRANSISTORS; GALLIUM; METALS; NANOWIRES; OPTICAL PROPERTIES; THIN FILM TRANSISTORS; THRESHOLD VOLTAGE;

ELECTRIC PROPERTIES;

INDIUM; INDIUM OXIDE; METAL NANOPARTICLE;

ARTICLE; CHEMISTRY; ELECTRIC CONDUCTIVITY; EQUIPMENT; EQUIPMENT DESIGN; EQUIPMENT FAILURE; NANOTECHNOLOGY; SEMICONDUCTOR;

ELECTRIC CONDUCTIVITY; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; INDIUM; METAL NANOPARTICLES; NANOTECHNOLOGY; TRANSISTORS, ELECTRONIC;

MLCS; MLOWN;

EID: 84872859717     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn305289w     Document Type: Article

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