High mobility amorphous InGaZnO thin film transistor with single wall carbon nanotubes enhanced-current path

Applied Physics Letters

Volumn 103, Issue 22, 2013, Pages

  Liu, Xingqiang ^a   Wang, Chunlan ^a   Xiao, Xiangheng ^a   Wang, Jingli ^a   Guo, Shishang ^a   Jiang, Changzhong ^a   Jong Yu, Woo ^a   Hu, Weida ^b   Li, Jinchai ^a   Liao, Lei ^a  

^a WUHAN UNIVERSITY   (China)

^b SHANGHAI INSTITUTE OF TECHNICAL PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS INGAZNO; CARRIER TRANSPORTATION; CHANNEL LENGTH; ELECTRICAL PERFORMANCE; FIELD-EFFECT MOBILITIES; HIGH MOBILITY; THIN-FILM TRANSISTOR (TFTS); WORKING DEVICE;

CARBON NANOTUBES; SOL-GEL PROCESS;

THIN FILM TRANSISTORS;

EID: 84888632081     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4834375     Document Type: Article

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