Effect of enhanced-mobility current path on the mobility of AOS TFT

Microelectronics Reliability

Volumn 52, Issue 7, 2012, Pages 1346-1349

  Kim, Myung Ju ^a   Choi, Duck Kyun ^a  

^a Hanyang University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE CHANNEL LAYERS; AMORPHOUS OXIDE SEMICONDUCTOR (AOS); BOTTOM GATE; CHANNEL LAYERS; CHANNEL LENGTH; CURRENT PATHS; DOUBLE LAYERS; HIGH CONDUCTIVITY; INDIUM GALLIUM ZINC OXIDES; INDIUM TIN OXIDE; MOBILITY ENHANCEMENT; RULE OF MIXTURE; SATURATION MOBILITY; SINGLE PATH;

AMORPHOUS SEMICONDUCTORS; INDIUM COMPOUNDS; THIN FILM TRANSISTORS; TIN;

TIN OXIDES;

EID: 84861793793     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2012.02.012     Document Type: Article

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