Comparison of the electrical and optical properties of direct current and radio frequency sputtered amorphous indium gallium zinc oxide films

Thin Solid Films

Volumn 527, Issue , 2013, Pages 21-25

  Yao, Jianke ^a   Gong, Li ^b   Xie, Lei ^a   Zhang, Shengdong ^a  

^a PEKING UNIVERSITY   (China)

^b SUN YAT SEN UNIVERSITY   (China)

Author keywords

Amorphous indium gallium zinc oxide; Direct current sputtering; Fermi level; Keywords; Oxygen vacancy; Radio frequency sputtering; Work function

Indexed keywords

DIRECT CURRENT; DIRECT CURRENT SPUTTERING; ELECTRICAL AND OPTICAL PROPERTIES; ELECTRICAL CONDUCTIVITY; INDIUM GALLIUM ZINC OXIDES; KEYWORDS; MATERIAL PARAMETER; RADIO FREQUENCIES; RADIO FREQUENCY SPUTTERING; SEMICONDUCTOR CHANNELS;

AMORPHOUS SEMICONDUCTORS; ELECTRIC CONDUCTIVITY; FERMI LEVEL; FLAT PANEL DISPLAYS; OXIDE FILMS; OXYGEN VACANCIES; RADIO WAVES; REFRACTIVE INDEX; STOICHIOMETRY; THIN FILM TRANSISTORS; ULTRAVIOLET PHOTOELECTRON SPECTROSCOPY; WORK FUNCTION;

AMORPHOUS FILMS;

EID: 84872613065     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2012.12.035     Document Type: Article

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