Characteristics of flexographic printed indium-zinc-oxide thin films as an active semiconductor layer in thin film field-effect transistors

Applied Surface Science

Volumn 320, Issue , 2014, Pages 634-642

  Dilfer, Stefan ^a   Hoffmann, Rudolf C ^a   Dörsam, Edgar ^a  

^a DARMSTADT UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

Field effect transistor; Flexographic printing; IZO; Oxide semiconductor

Indexed keywords

AMORPHOUS FILMS; CARRIER MOBILITY; DOPING (ADDITIVES); II-VI SEMICONDUCTORS; INDIUM COMPOUNDS; OFFSET PRINTING; OXIDE FILMS; OXIDE SEMICONDUCTORS; PRINTING PRESSES; SEMICONDUCTING INDIUM; SILICA; SILICON OXIDES; SUBSTRATES; THIN FILM CIRCUITS; THIN FILM TRANSISTORS; THIN FILMS; THRESHOLD VOLTAGE; ZINC OXIDE;

DRY FILM THICKNESS; FLEXOGRAPHIC PRINTING; ON/OFF CURRENT RATIO; OXIDE SEMICONDUCTOR THIN FILM TRANSISTORS; ROOT MEAN SQUARE ROUGHNESS; SEMICONDUCTOR LAYERS; THIN FILM FIELD EFFECT TRANSISTORS; THRESHOLD VOLTAGES (VTH);

FIELD EFFECT TRANSISTORS;

EID: 84919338719     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2014.09.106     Document Type: Article

References (36)

1. M. Frey, F. Clement, S. Dilfer, D. Erath, and D. Biro Front-side metalization by means of flexographic printing Energy Procedia 8 2011 581 586
2. G.A. Armin, B.B. Matthew, H. Bram, and M. Thomas Industrial Silicon Wafer Solar Cells-Status and Trends Green 2 2013 135 148 10.1515/green-2012-0007
3. F.C. Krebs Fabrication and processing of polymer solar cells: a review of printing and coating techniques Sol. Energy Mater. Sol. Cells 93 2009 394 412
4. F.C. Krebs, M. Jørgensen, K. Norrman, O. Hagemann, J. Alstrup, and T.D. Nielsen A complete process for production of flexible large area polymer solar cells entirely using screen printing - first public demonstration Sol. Energy Mater. Sol. Cells 93 2009 422 441
5. J. Kawahara, P. Andersson Ersman, D. Nilsson, K. Katoh, Y. Nakata, and M. Sandberg Flexible active matrix addressed displays manufactured by printing and coating techniques J. Polym. Sci. B: Polym. Phys. 51 2013 265 271
6. K.T. Braam, S.K. Volkman, and V. Subramanian Characterization and optimization of a printed, primary silver-zinc battery J. Power Sour. 199 2012 367 372
7. K. Reuter, H. Kempa, N. Brandt, M. Bartzsch, and A. Huebler Influence of process parameters on the electrical properties of offset printed conductive polymer layers Prog. Org. Coat. 58 2007 312 315
8. M. Berggren, D. Nilsson, and N.D. Robinson Organic materials for printed electronics Nat. Mater. 6 2007 3 5
9. B.J. de Gans, P.C. Duineveld, and U.S. Schubert Inkjet printing of polymers: state of the art and future developments Adv. Mater. 16 2004 203 213
10. S. Dilfer Possible fields of application for processing ceramic suspensions by printing technologies CFI Ceram. Forum Int. 86 September 2009 E37 E41
11. S. Dilfer, and N. Schmitt Printing conductive layers using waterless offset technology considering the influences of the low-viscosity polymer inks and the rubber blankets J. Coat. Technol. Res. 9 2012 475 482
12. P. Atanasova, D. Rothenstein, J.J. Schneider, R.C. Hoffmann, S. Dilfer, and S. Eiben Virus-templated synthesis of ZnO nanostructures and formation of field-effect transistors Adv. Mater. 23 November 2011 4918 4922
13. R.C. Hoffmann, P. Atanasova, S. Dilfer, J. Bill, and J.J. Schneider Templating of polycrystalline ZnO with DNA and its performance in field-effect transistors Phys. Status Solidi A: Appl. Mater. Sci. 208 August 2011 1983 1988
14. R.C. Hoffmann, S. Dilfer, A. Issanin, and J.J. Schneider Field effect transistor performance of zinc oxide thin films derived from molecular based alkoxyalkyl zinc compounds Phys. Status Solidi A 208 7 2011 1708 1713
15. R.C. Hoffmann, S. Dilfer, A. Issanin, and J.J. Schneider Solution processed ZnO - challenges in processing and performance on flexible substrates Phys. Status Solidi A 207 2010 1590 1595
16. R.C. Hoffmann, S. Dilfer, and J.J. Schneider Transparent indium tin oxide as inkjet printed thin film electrodes for organic field effect transistors Phys. Status Solidi A 208 12 2011 2920 2925
17. R.C. Hoffmann, S. Dilfer, and J.J. Schneider Transparent indium tin oxide as inkjet-printed thin film electrodes for organic field-effect transistors Phys. Status Solidi A: Appl. Mater. Sci. 208 December 2011 2920 2925
18. J.J. Schneider, R.C. Hoffmann, J. Engstler, S. Dilfer, A. Klyszcz, and E. Erdem Zinc oxide derived from single source precursor chemistry under chimie douce conditions: formation pathway, defect chemistry and possible applications in thin film printing J. Mater. Chem. 19 2009 1449 1457
19. J.J. Schneider, R.C. Hoffmann, J. Engstler, A. Klyszcz, E. Erdem, and P. Jakes Synthesis, characterization, defect chemistry, and FET properties of microwave-derived nanoscaled zinc oxide Chem. Mater. 22 2010 2203 2212
20. J.J. Schneider, R.C. Hoffmann, J. Engstler, O. Soffke, W. Jaegermann, and A. Issanin A printed and flexible field-effect transistor device with nanoscale zinc oxide as active semiconductor material Adv. Mater. 20 2008 3383 3387
21. R.C. Hoffmann, M. Kaloumenis, S. Heinschke, E. Erdem, P. Jakes, and R. Eichel Molecular precursor derived and solution processed amorphous indium zinc oxide as semiconductor in a field-effect transistor device. Towards an improved understanding of semiconductor film composition J. Mater. Chem. C 1 2013 2577 2584
22. D.E. Walker, M. Major, M. Baghaie Yazdi, A. Klyszcz, M. Haeming, and K. Bonrad High mobility indium zinc oxide thin film field-effect transistors by semiconductor layer engineering ACS Appl. Mater. Interfaces 4 2012 6835 6841
23. P.F. Moonen, I. Yakimets, and J. Huskens Fabrication of transistors on flexible substrates: from mass-printing to high-resolution alternative lithography strategies Adv. Mater. 24 2012 5526 5541
24. A. Huebler, F. Doetz, H. Kempa, H. Katz, M. Bartzsch, and N. Brandt Ring oscillator fabricated completely by means of mass-printing technologies Org. Electron. 8 2007 480 486
25. H. Kipphan Handbook of Print Media vol. 1067 2001 Springer Berlin
26. X. Yin, and S. Kumar Flow visualization of the liquid emptying process in scaled-up gravure grooves and cells Chem. Eng. Sci. 61 2006 1146 1156
27. P. Kopola, M. Tuomikoski, R. Suhonen, and A. Maaninen Gravure printed organic light emitting diodes for lighting applications Thin Solid Films 517 2009 5757 5762
28. B. Sun, and H. Sirringhaus Surface tension and fluid flow driven self-assembly of ordered ZnO nanorod films for high-performance field effect transistors J. Am. Chem. Soc. 128 2006 16231 16237
29. D.J. Kim, D.L. Kim, Y.S. Rim, C.H. Kim, W.H. Jeong, and H.S. Lim Improved electrical performance of an oxide thin-film transistor having multistacked active layers using a solution process ACS Appl. Mater. Interfaces 4 2012 4001 4005
30. K. Okamura, N. Mechau, D. Nikolova, and H. Hahn Influence of interface roughness on the performance of nanoparticulate zinc oxide field-effect transistors Appl. Phys. Lett. 93 2008 083105-083105-3
31. Y. Wang, X.W. Sun, G.K.L. Goh, H.V. Demir, and H.Y. Yu Influence of channel layer thickness on the electrical performances of inkjet-printed In-Ga-Zn oxide thin-film transistors IEEE Trans. Electron Dev. 58 2011 480 485
32. P. Barquinha, A. Pimentel, A. Marques, L. Pereira, R. Martins, and E. Fortunato Influence of the semiconductor thickness on the electrical properties of transparent TFTs based on indium zinc oxide J. Non-Cryst. Solids 352 2006 1749 1752
33. Y. Choi, G.H. Kim, W.H. Jeong, H.J. Kim, B.D. Chin, and J.W. Yu Characteristics of gravure printed InGaZnO thin films as an active channel layer in thin film transistors Thin Solid Films 518 2010 6249 6252
34. D.H. Lee, Y.J. Chang, G.S. Herman, and C.H. Chang A general route to printable high-mobility transparent amorphous oxide semiconductors Adv. Mater. 19 2007 843 847
35. M.-G. Kim, M.G. Kanatzidis, A. Facchetti, and T.J. Marks Low-temperature fabrication of high-performance metal oxide thin-film electronics via combustion processing Nat. Mater. 10 2011 382 388
36. K. Banger, Y. Yamashita, K. Mori, R. Peterson, T. Leedham, and J. Rickard Low-temperature, high-performance solution-processed metal oxide thin-film transistors formed by a 'sol-gel on chip' process Nat. Mater. 10 2010 45 50