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Volumn 98, Issue 26, 2011, Pages

Surface oxygen vacancy origin of electron accumulation in indium oxide

Author keywords

[No Author keywords available]

Indexed keywords

ALIOVALENT DOPING; COORDINATION ENVIRONMENT; ELECTRON ACCUMULATION; EXTENDED DEFECT; HIGH ELECTRON CONCENTRATION; HIGH MOBILITY; INDIUM OXIDE; METAL OXIDE SYSTEM; METAL OXIDES; NON-STOICHIOMETRY; OXIDE MATERIALS; SURFACE OXYGEN VACANCIES; SURFACES AND INTERFACES;

EID: 79960079188     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3604811     Document Type: Article
Times cited : (84)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.