Boost up mobility of solution-processed metal oxide thin-film transistors via confining structure on electron pathways

Advanced Materials

Volumn 26, Issue 25, 2014, Pages 4273-4278

  Rim, You Seung ^a   Chen, Huajun ^a   Kou, Xiaolu ^a   Duan, Hsin Sheng ^a   Zhou, Huanping ^a   Cai, Min ^a   Kim, Hyun Jae ^b   Yang, Yang ^a  

^a University of California   (United States)

^b Yonsei University   (South Korea)

Author keywords

oxide semiconductor; solution process; structural properties; thin film transistor

Indexed keywords

ECONOMIC AND SOCIAL EFFECTS; METALS; OXIDE SEMICONDUCTORS; STRUCTURAL PROPERTIES; THIN FILM CIRCUITS; THIN FILMS; THRESHOLD VOLTAGE;

AMORPHOUS OXIDE SEMICONDUCTOR (AOS); HIGH ELECTRON MOBILITY; HIGH MOBILITY; METAL OXIDE THIN-FILM TRANSISTORS; NOVEL STRUCTURES; SOLUTION PROCESS; SOLUTION-PROCESSED; ULTRAHIGH DENSITY;

THIN FILM TRANSISTORS;

EID: 84903733159     PISSN: 09359648     EISSN: 15214095     Source Type: Journal    
DOI: 10.1002/adma.201400529     Document Type: Article

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