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Volumn 3, Issue 4, 2015, Pages 854-860

Fabrication of high-performance, low-temperature solution processed amorphous indium oxide thin-film transistors using a volatile nitrate precursor

(7) Choi, Chang Ho a Han, Seung Yeol a,b Su, Yu Wei a,c Fang, Zhen a Lin, Liang Yu d Cheng, Chun Cheng d Chang, Chih Hung a

a 1148 Kelley Engineering Center Corvallis (United States)

b CSD Nano Inc (United States)

c NATIONAL CHIAO TUNG UNIVERSITY (Taiwan)

d AU OPTRONICS CORPORATION (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; ANNEALING; GRAVIMETRIC ANALYSIS; INDIUM; NITRATES; SUBSTRATES; TEMPERATURE; THERMOGRAVIMETRIC ANALYSIS; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

AMORPHOUS INDIUM-OXIDE; ANNEALING TEMPERATURES; AVERAGE MOBILITY; DEVICE PERFORMANCE; LOW TEMPERATURE SOLUTIONS; NITRATE PRECURSOR (NP); THERMAL GRAVIMETRIC ANALYSIS; TRANSISTOR CHARACTERISTICS;

THIN FILM TRANSISTORS;

EID: 84928899852 PISSN: 20507534 EISSN: 20507526 Source Type: Journal
DOI: 10.1039/c4tc01568a Document Type: Article

Times cited : (73)

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