3D Behavior of Schottky Barriers of 2D Transition-Metal Dichalcogenides

ACS Applied Materials and Interfaces

Volumn 7, Issue 46, 2015, Pages 25709-25715

  Guo, Yuzheng ^a   Liu, Dameng ^b   Robertson, John ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b TSINGHUA UNIVERSITY   (China)

Author keywords

2D; DFT; metal contact; MoS2; Schottky barrier; transition metal dichalcogenide

Indexed keywords

CHEMICAL BONDS; DENSITY FUNCTIONAL THEORY; GEOMETRY; LAYERED SEMICONDUCTORS; MOLYBDENUM COMPOUNDS; SCHOTTKY BARRIER DIODES; VAN DER WAALS FORCES;

CHALCOGEN ATOMS; METAL CONTACTS; METAL-INDUCED GAP STATE; MOS2; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY BARRIERS; TRANSITION METAL DICHALCOGENIDES; WEAK INTERLAYERS;

TRANSITION METALS;

EID: 84948706195     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/acsami.5b06897     Document Type: Article

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