Chalcogen vacancies in monolayer transition metal dichalcogenides and Fermi level pinning at contacts

Applied Physics Letters

Volumn 106, Issue 17, 2015, Pages

  Guo, Y ^a   Liu, D ^b   Robertson, J ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b TSINGHUA UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

FERMI LEVEL; MOLYBDENUM COMPOUNDS; SCHOTTKY BARRIER DIODES; TRANSITION METALS;

AMBIPOLAR CONDUCTION; CHALCOGENS; FERMI LEVEL PINNING; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY BARRIERS; TRANSITION METAL DICHALCOGENIDES; VACANCY FORMATION ENERGIES;

VACANCIES;

EID: 84929486025     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4919524     Document Type: Article

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