Schottky barrier heights and band alignments in transition metal dichalcogenides

Microelectronic Engineering

Volumn 147, Issue , 2015, Pages 184-187

  Guo, Yuzheng ^a   Robertson, John ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

Band alignments; DFT; Metal contact; MoS2; Schottky barrier heights; Transition metal dichalcogenides

Indexed keywords

CHEMICAL BONDS; DENSITY FUNCTIONAL THEORY; LAYERED SEMICONDUCTORS; MOLYBDENUM COMPOUNDS; SCHOTTKY BARRIER DIODES; SELENIUM COMPOUNDS; SEMICONDUCTOR METAL BOUNDARIES; TUNGSTEN COMPOUNDS; VAN DER WAALS FORCES;

BAND ALIGNMENTS; METAL CONTACTS; MOS2; SCHOTTKY BARRIER HEIGHTS; TRANSITION METAL DICHALCOGENIDES;

TRANSITION METALS;

EID: 84928951517     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2015.04.069     Document Type: Article

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