Analysing black phosphorus transistors using an analytic Schottky barrier MOSFET model

Nature Communications

Volumn 6, Issue , 2015, Pages

  Penumatcha, Ashish V ^a   Salazar, Ramon B ^a   Appenzeller, Joerg ^a  

^a PURDUE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON NANOTUBE; METAL OXIDE; NANOMATERIAL; PHOSPHORUS;

ELECTRIC FIELD; FILM; FULLERENE; NANOPARTICLE; NUMERICAL MODEL; PHOSPHORUS; QUANTITATIVE ANALYSIS;

ARTICLE; CRYSTAL; ELECTRON; FIELD EFFECT TRANSISTOR; MOLECULAR MODEL; THICKNESS;

EID: 84946926269     PISSN: None     EISSN: 20411723     Source Type: Journal    
DOI: 10.1038/ncomms9948     Document Type: Article

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