Tunability of short-channel effects in MoS2 field-effect devices

Nano Letters

Volumn 15, Issue 1, 2015, Pages 301-306

  Zhang, Feng ^a   Appenzeller, Joerg ^a  

^a Purdue University   (United States)

Author keywords

2D layered materials; dielectric constant; MoS2; short channel effects; ultrathin body devices

Indexed keywords

DIELECTRIC MATERIALS; FIELD EFFECT TRANSISTORS; MOLECULES; PERMITTIVITY; THRESHOLD VOLTAGE;

DEVICE CHARACTERISTICS; ELECTRICAL PERFORMANCE; ELECTRON CONDUCTION; FIELD-EFFECT DEVICES; LAYERED MATERIAL; MOS2; SHORT-CHANNEL EFFECT; ULTRA-THIN-BODY;

MOLYBDENUM COMPOUNDS;

EID: 84920945784     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl503586v     Document Type: Article

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