Origins and characteristics of the threshold voltage variability of quasiballistic single-walled carbon nanotube field-effect transistors

ACS Nano

Volumn 9, Issue 2, 2015, Pages 1936-1944

  Cao, Qing ^a   Han, Shu Jen ^a   Penumatcha, Ashish V ^a   Frank, Martin M ^a   Tulevski, George S ^a   Tersoff, Jerry ^a   Haensch, Wilfried E ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

carbon nanotube; threshold voltage; transistor; variability

Indexed keywords

CARBON NANOTUBES; MONTE CARLO METHODS; NANOTUBES; SINGLE-WALLED CARBON NANOTUBES (SWCN); TEMPERATURE MEASUREMENT; THRESHOLD VOLTAGE; TRANSISTORS;

GATE OXIDE THICKNESS; MULTIPLE NANOTUBES; NANOTUBE TRANSISTORS; OFF-STATE LEAKAGE CURRENT; SCALING PROPERTIES; SILICON TECHNOLOGIES; THRESHOLD VOLTAGE VARIABILITY; VARIABILITY;

CARBON NANOTUBE FIELD EFFECT TRANSISTORS;

EID: 84923507923     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn506839p     Document Type: Article

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