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Volumn 12, Issue 10, 2012, Pages 5331-5336

Understanding the impact of Schottky barriers on the performance of narrow bandgap nanowire field effect transistors

Author keywords

ambipolar; field effect transistor; III?V; InAs; InSb; Nanowire; narrow bandgap; on off current ratio; Schottky

Indexed keywords

AMBIPOLAR; INAS; INSB; NARROW BAND GAP; ON/OFF-CURRENT RATIO; SCHOTTKY;

EID: 84867469471     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl302684s     Document Type: Article
Times cited : (59)

References (34)
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    • (1994) Modern Quantum Mechanics
    • Sakurai, J.J.1    Tuan, S.F.2
  • 33
    • 70449652166 scopus 로고    scopus 로고
    • In; June 2-5, 2009, Traverse City, MI, IEEE Nanotechnology Materials and Devices Conference (NMDC): New York
    • Chen, H.; Sun, X.; Lai, K. W. C.; Meyyappan, M.; Xi, N. In Infrared Detection Using an InSb Nanowire; June 2-5, 2009, Traverse City, MI, IEEE Nanotechnology Materials and Devices Conference (NMDC): New York, 2009; pp 212-216.
    • (2009) Infrared Detection Using An InSb Nanowire , pp. 212-216
    • Chen, H.1    Sun, X.2    Lai, K.W.C.3    Meyyappan, M.4    Xi, N.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.