Selective Passivation of GeO2/Ge Interface Defects in Atomic Layer Deposited High-k MOS Structures

ACS Applied Materials and Interfaces

Volumn 7, Issue 37, 2015, Pages 20499-20506

  Zhang, Liangliang ^a   Li, Huanglong ^b,d   Guo, Yuzheng ^b   Tang, Kechao ^a   Woicik, Joseph ^c   Robertson, John ^b   Mcintyre, Paul C ^a  

^a Stanford University   (United States)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^c NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^d TSINGHUA UNIVERSITY   (China)

Author keywords

Al2O3; first principles modeling; Ge; high k; interface traps

Indexed keywords

ALUMINA; ALUMINUM OXIDE; ATOMIC LAYER DEPOSITION; CALCULATIONS; CAPACITANCE; DEFECTS; DIELECTRIC MATERIALS; ENERGY GAP; GATE DIELECTRICS; GERMANIUM; GERMANIUM OXIDES; HIGH-K DIELECTRIC; METALS; MOS DEVICES; OXIDE SEMICONDUCTORS; PASSIVATION; PHOTOELECTRON SPECTROSCOPY;

AL2O3; ATOMIC LAYER DEPOSITED; ENERGY DISTRIBUTIONS; FIRST PRINCIPLES MODELS; HIGH- K; INTERFACE TRAP DENSITY; INTERFACE TRAPS; PARTIAL DENSITY OF STATE;

PHASE INTERFACES;

EID: 84942546492     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/acsami.5b06087     Document Type: Article

References (42)

1. Wallace, R. M.; Mcintyre, P. C.; Kim, J.; Nishi, Y. Atomic Layer Deposition Of Dielectrics on Ge and III-V Materials for Ultrahigh Performance Transistors MRS Bull. 2009, 34, 493-503 10.1557/mrs2009.137
2. Chui, C. O.; Kim, H.; Mcintyre, P. C.; Saraswat, K. C. A Germanium NMOSFET Process Integrating Metal Gate and Improved Hi-κ Dielectrics IEEE Int. Electron Dev. Mtg. (IEDM) Technol. Dig. 2003, 437-440 10.1109/IEDM.2003.1269316
3. Chui, C. O.; Kim, H.; Chi, D.; Triplett, B.; Mcintyre, P. C.; Saraswat, K. C. A Sub-400 °C Germanium MOSFET Technology with High-k Dielectric and Metal Gate IEEE Int. Electron Dev. Mtg. (IEDM) Technol. Dig. 2002, 437-440 10.1109/IEDM.2002.1175872
4. Xie, Q.; Deng, S.; Schaekers, M.; Lin, D.; Caymax, M.; Delabie, A.; Qu, X.-P.; Jiang, Y.-L.; Deduytsche, D.; Detavernier, C. Germanium Surface Passivation and Atomic Layer Deposition of High-k Dielectrics-a Tutorial Review on Ge-Based MOS Capacitors Semicond. Sci. Technol. 2012, 27, 074012-074012 10.1088/0268-1242/27/7/074012
5. Bodlaki, D.; Yamamoto, H.; Waldeck, D.; Borguet, E. Ambient Stability of Chemically Passivated Germanium Interfaces Surf. Sci. 2003, 543, 63-74 10.1016/S0039-6028(03)00958-0
6. Brunco, D. P.; De Jaeger, B.; Eneman, G.; Satta, A.; Terzieva, V.; Souriau, L.; Leys, F. E.; Pourtois, G.; Houssa, M.; Opsomer, K.; Nicholas, G.; Meuris, M.; Heyns, M. Germanium: The Past And Possibly a Future Material for Microelectronics ECS Trans. 2007, 479-493 10.1149/1.2779584
7. Bellenger, F.; Houssa, M.; Delabie, A.; Conard, T.; Caymax, M.; Meuris, M.; Meyer, K. D.; Heyns, M. Electrical Passivation of the (100) Ge Surface by Its Thermal Oxide ECS Trans. 2007, 451-459 10.1149/1.2779581
8. Delabie, A.; Bellenger, F.; Houssa, M.; Conard, T.; Van Elshocht, S.; Caymax, M.; Heyns, M.; Meuris, M. Effective Electrical Passivation of Ge(100) for High-k Gate Dielectric Layers Using Germanium Oxide Appl. Phys. Lett. 2007, 91, 082904 10.1063/1.2773759
9. Kuzum, D.; Pethe, A. J.; Krishnamohan, T.; Oshima, Y.; Sun, Y.; Mcvittie, J. P.; Pianetta, P. A.; Mcintyre, P. C.; Saraswat, K. C. Interface-Engineered Ge (100) And (111), N- and P-FETs with High Mobility IEEE Int. Electron Dev. Mtg. (IEDM) Technol. Dig. 2007, 723-726 10.1109/IEDM.2007.4419048
10. 2 Interface Control With High-Pressure Oxidation for Improving Electrical Characteristics Appl. Phys. Express 2009, 2, 071404 10.1143/APEX.2.071404
11. 2(IV)] MRS Online Proc. Libr. 2009, 10.1557/PROC-1155-C02-04
12. 2 Appl. Phys. Lett. 2008, 93, 161909 10.1063/1.3006320
13. 3 Layers for Ge (001) Gate Stacks: Local Composition Evolution and Dielectric Properties J. Appl. Phys. 2011, 110, 094105-1-6 10.1063/1.3647761
14. Oshima, Y.; Sun, Y.; Kuzum, D.; Sugawara, T.; Saraswat, K. C.; Pianetta, P.; Mcintyre, P. C. Chemical Bonding, Interfaces, And Defects in Hafnium Oxide/Germanium Oxynitride Gate Stacks on Ge(100) J. Electrochem. Soc. 2008, 155, G304-09 10.1149/1.2995832
15. Baldovino, S.; Lamperti, A.; Fanciulli, M.; Molle, A. Role of the Oxygen Content in the GeO2 Passivation of Ge Substrates as a Function of the Oxidizer J. Electrochem. Soc. 2012, 159 (6) H555-H559 10.1149/2.031206jes
16. Kuzum, D.; Krishnamohan, T.; Pethe, A. J.; Okyay, A. K.; Oshima, Y.; Sun, Y.; Mcvittie, J. P.; Pianetta, P. A.; Mcintyre, P. C.; Saraswat, K. C. Ge-Interface Engineering With Ozone Oxidation For Low Interface-State Density IEEE Electron Device Lett. 2008, 29, 328-330 10.1109/LED.2008.918272
17. 2 Interface Appl. Phys. Lett. 2010, 96, 222110 10.1063/1.3446839
18. 3/GeOx/Ge Gate Stack Fabricated by Plasma Post Oxidation IEEE Trans. Electron Devices 2012, 59, 335-341 10.1109/TED.2011.2176495
19. 3/GeOx/Ge Gate Stacks Fabricated by Plasma Post Oxidation VLSI symp. 2012, 161-162 10.1109/VLSIT.2012.6242511
20. 3: In Situ Surface Characterization Appl. Phys. Lett. 2009, 95, 032907 10.1063/1.3177195
21. 3 on Germanium PMOSFETs and Impact of Gate Metal Selection IEEE Electron Device Lett. 2014, 34, 732-734 10.1109/LED.2013.2259137
22. 3 InGaAs MOS Devices IEEE Trans. Electron Devices 2012, 59, 2100-2106 10.1109/TED.2012.2197000
23. 3-InGaAs MOS From Depletion to Inversion IEEE Trans. Electron Devices 2012, 59 (9) 2383-2389 10.1109/TED.2012.2205255
24. Weiland, C.; Rumaiz, A.; Lysaght, P.; Karlin, B.; Woicik, J.; Fischer, D. NIST High Throughput Variable Kinetic Energy Hard X-Ray Photoelectron Spectroscopy Facility J. Electron Spectrosc. Relat. Phenom. 2013, 190, 193-200 10.1016/j.elspec.2013.04.008
25. Wang, D.; Chang, Y.-L.; Wang, Q.; Cao, J.; Farmer, D. B.; Gordon, R. G.; Dai, H. Surface Chemistry And Electrical Properties of Germanium Nanowires J. Am. Chem. Soc. 2004, 126 (37) 11602-11611 10.1021/ja047435x
26. Milman, V.; Winkler, B.; White, J. A.; Pickard, C. J.; Payne, M. C.; Akhmatskaya, E. V.; Nobes, R. H. Electronic Structure, Properties, and Phase Stability of Inorganic Crystals: A Pseudopotential Plane-Wave Study Int. J. Quantum Chem. 2000, 77, 895-910 10.1002/(SICI)1097-461X(2000)77:5<895::AID-QUA10>3.0.CO;2-C
27. Segall, M. D.; Lindan, P. J. D.; Probert, M. J.; Pickard, C. J.; Hasnip, P. J.; Clark, S. J.; Payne, M. C. First-Principles Simulation: Ideas, Illustrations and the CASTEP Code J. Phys.: Condens. Matter 2002, 14, 2717-2744 10.1088/0953-8984/14/11/301
28. Perdew, J. P.; Burke, K.; Ernzerhof, M. Generalized Gradient Approximation Made Simple Phys. Rev. Lett. 1997, 78, 3865-3868 10.1103/PhysRevLett.78.1396
29. Bylander, D. M.; Kleinman, L. Good Semiconductor Band Gaps with a Modified Local-Density Approximation Phys. Rev. B: Condens. Matter Mater. Phys. 1990, 41, 7868-7871 10.1103/PhysRevB.41.7868
30. Li, H. First Principle Modeling of High-K Oxide on Ge. PhD thesis, University of Cambridge, Cambridge, U.K., 2014.
31. Weber, J. R.; Janotti, A.; Rinke, P.; Van de Walle, C. G. Dangling-Bond Defects and Hydrogen Passivation in Germanium Appl. Phys. Lett. 2007, 91, 142101 10.1063/1.2793184
32. Broqvist, P.; Alkauskas, A.; Pasquarello, A. Defect Levels of Dangling Bonds in Silicon and Germanium through Hybrid Functionals Phys. Rev. B: Condens. Matter Mater. Phys. 2008, 78, 075203 10.1103/PhysRevB.78.075203
33. Binder, J. F.; Broqvist, P.; Pasquarello, A. Charge Trapping in Substoichiometric Germanium Oxide Microelectron. Eng. 2011, 88, 1428-1431 10.1016/j.mee.2011.03.133
34. x Interfaces Microelectron. Eng. 2013, 109, 244-249 10.1016/j.mee.2013.03.111
35. 2, Ge, and Their Interfaces Appl. Phys. Lett. 2011, 99, 032902 10.1063/1.3610463
36. Li, H.; Lin, L.; Robertson, J. Identifying a Suitable Passivation Route for Ge Interfaces Appl. Phys. Lett. 2012, 101, 052903 10.1063/1.4742166
37. 2 Interfaces through Hybrid Functionals Phys. Rev. B: Condens. Matter Mater. Phys. 2012, 85, 245305 10.1103/PhysRevB.85.245305
38. Kastner, M.; Adler, D.; Fritzsche, H. Valence-Alternation Model For Localized Gap States in Lone-Pair Semiconductors Phys. Rev. Lett. 1976, 37, 1504 10.1103/PhysRevLett.37.1504
39. OReilly, E. P.; Robertson, J. Theory of Defects in Vitreous Silicon Dioxide Phys. Rev. B: Condens. Matter Mater. Phys. 1983, 27, 3780-3795 10.1103/PhysRevB.27.3780
40. 2/Ge Metal-Oxide-Semiconductor Structures Fabricated by Thermal Oxidation Appl. Phys. Lett. 2008, 93, 032104 10.1063/1.2959731
41. Blöchl, P. E. First-Principles Calculations of Defects in Oxygen-Deficient Silica Exposed to Hydrogen Phys. Rev. B: Condens. Matter Mater. Phys. 2000, 61, 6158-6179 10.1103/PhysRevB.62.6158
42. Zhang, K.; Kim, S. J.; Zhang, Y.; Heeg, T.; Schlom, D. G.; Shen, W.; Pan, X. Epitaxial Growth of ZnO on (1 1 1) Si Free of an Amorphous Interlayer J. Phys. D: Appl. Phys. 2014, 47, 105302 10.1088/0022-3727/47/10/105302