Electrical passivation of the (100)Ge surface by its thermal oxide7

ECS Transactions

Volumn 11, Issue 4, 2007, Pages 451-459

  Bellenger, F ^a,b   Houssa, M ^a,b   Delabie, A ^a   Conard, T ^a   Caymax, M ^a   Meuris, M ^a   De Meyer, K ^a,b   Heyns, M M ^a,b  

^a IMEC   (Belgium)

^b Katholieke Universiteit Leuven   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; ALUMINUM OXIDE; ATOMIC LAYER DEPOSITION; CAPACITANCE; GERMANIUM OXIDES; HAFNIUM OXIDES; LOGIC GATES; MOLECULAR OXYGEN; PASSIVATION; ZIRCONIA;

CAPACITANCE VOLTAGE; CONDUCTANCE-FREQUENCY; ELECTRICAL PASSIVATION; FLAT-BAND VOLTAGE; GATE STACKS; GE SURFACES; THERMAL OXIDE LAYER;

DIELECTRIC MATERIALS;

EID: 38349143853     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2779581     Document Type: Conference Paper

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