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Journal of the Electrochemical Society

Volumn 159, Issue 6, 2012, Pages

Role of the oxygen content in the GeO 2 passivation of Ge substrates as a function of the oxidizer

(4) Baldovino, Silvia a Lamperti, Alessio a Fanciulli, Marco a,b Molle, Alessandro a

a LABORATORIO MDM (Italy)

b UNIVERSITY OF MILANO BICOCCA (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITIONAL DEPTH PROFILING; ELECTRICAL QUALITY; GE SUBSTRATES; GE SURFACES; INTERFACE CHEMISTRY; INTERFACE TRAPS; INTERFACIAL LAYER; MOS STRUCTURE; OXIDATION PROCESS; OXYGEN CONTENT; PASSIVATION LAYER;

CHEMICAL ANALYSIS; GADOLINIUM; GERMANIUM; GERMANIUM OXIDES; PASSIVATION;

INTERFACES (MATERIALS);

EID: 84861375501 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/2.031206jes Document Type: Article

Times cited : (2)

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