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Volumn 47, Issue 10, 2014, Pages

Epitaxial growth of ZnO on (1 1 1) Si free of an amorphous interlayer

Author keywords

amorphous interlayer; epitaxial growth; Si; STEM; ZnO

Indexed keywords


EID: 84894424178     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/47/10/105302     Document Type: Article
Times cited : (9)

References (23)
  • 8
    • 40049105064 scopus 로고    scopus 로고
    • Electron dephasing in nanocrystalline silicon thin films
    • DOI 10.1063/1.2840179
    • Zhang K and Shen W Z 2008 Appl. Phys. Lett. 92 083101 (Pubitemid 351323085)
    • (2008) Applied Physics Letters , vol.92 , Issue.8 , pp. 083101
    • Zhang, K.1    Shen, W.Z.2
  • 20
    • 2842559347 scopus 로고    scopus 로고
    • 10.1103/PhysRevB.54.17745 0163-1829 B
    • Kisielowski C et al 1996 Phys. Rev. B 54 17745-53
    • (1996) Phys. Rev. , vol.54 , pp. 17745-17753
    • Kisielowski, C.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.