EOT scaling of TiO2/Al2O3 on germanium pMOSFETs and impact of gate metal selection

IEEE Electron Device Letters

Volumn 34, Issue 6, 2013, Pages 732-734

  Zhang, Liangliang ^a   Gunji, Marika ^a   Thombare, Shruti ^a   McIntyre, Paul C ^a  

^a Stanford University   (United States)

Author keywords

Gate metal selection; gate stack; Ge MOSFET; TiO2 Al2O2

Indexed keywords

GATE METALS; GATE STACKS; GE MOSFET; HIGH-K DIELECTRIC; ON STATE CURRENT; STABLE METALS; SUBTHRESHOLD SWING; TIO;

ALUMINUM; LOGIC GATES; MOSFET DEVICES; TITANIUM DIOXIDE;

GERMANIUM;

EID: 84878333670     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2013.2259137     Document Type: Article

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