SCOPUS 정보 검색 플랫폼

Materials Research Society Symposium Proceedings

Volumn 1155, Issue , 2009, Pages 169-176

Material properties, thermal stabilities and electrical characteristics of Ge MOS devices, depending on oxidation states of Ge oxide: Monoxide [GeO(II)] and dioxide [GeO2(IV)]

(3) Kamata, Yoshiki a Takashima, Akira a Tsutomu, Tezuka a

a TOSHIBA CORPORATION (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; CHLORINE COMPOUNDS; DESORPTION; ETCHING; LANTHANUM COMPOUNDS; LOGIC GATES; MOS DEVICES; REDOX REACTIONS;

DESORPTION TEMPERATURES; ELECTRICAL CHARACTERISTIC; ETCHING METHOD; GE SUBSTRATES; HCL SOLUTION; OXIDATION STATE; PRE-TREATMENT SOLUTIONS; REDOX POTENTIALS;

GERMANIUM OXIDES;

EID: 77950995363 PISSN: 02729172 EISSN: None Source Type: Conference Proceeding
DOI: 10.1557/proc-1155-c02-04 Document Type: Conference Paper

Times cited : (3)

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