Dual Gate Black Phosphorus Field Effect Transistors on Glass for NOR Logic and Organic Light Emitting Diode Switching

Nano Letters

Volumn 15, Issue 9, 2015, Pages 5778-5783

  Kim, Jin Sung ^a   Jeon, Pyo Jin ^a   Lee, Junyeong ^a   Choi, Kyunghee ^a   Lee, Hee Sung ^a   Cho, Youngsuk ^a   Lee, Young Tack ^b   Hwang, Do Kyung ^b   Im, Seongil ^a  

^a Yonsei University   (South Korea)

^b Korea Institute of Science and Technology   (South Korea)

Author keywords

Black phosphorus; dual gate FET; inverter; NOR logic; OLED switching

Indexed keywords

DIELECTRIC MATERIALS; DRAIN CURRENT; GATE DIELECTRICS; GLASS; LIGHT EMITTING DIODES; ORGANIC LIGHT EMITTING DIODES (OLED); PHOSPHORUS; SUBSTRATES; SWITCHING FUNCTIONS; THRESHOLD VOLTAGE;

DEVICE ENCAPSULATIONS; DRAIN VOLTAGE; DUAL-GATE FET; GLASS SUBSTRATES; INVERTER; LOGIC FUNCTIONS; NOR LOGIC; ON/OFF CURRENT RATIO;

FIELD EFFECT TRANSISTORS;

EID: 84941059114     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/acs.nanolett.5b01746     Document Type: Article

References (39)

1. Geim, A. K. Graphene: Status and Prospects Science 2009, 324, 1530-1534 10.1126/science.1158877
2. Novoselov, K. S.; Jiang, D.; Schedin, F.; Booth, T. J.; Khotkevich, V. V.; Morozov, S. V.; Geim, A. K. Two-Dimensional Atomic Crystals Proc. Natl. Acad. Sci. U. S. A. 2005, 102, 10451-10453 10.1073/pnas.0502848102
3. Novoselov, K. S.; Geim, A. K.; Morozov, S. V.; Jiang, D.; Zhang, Y.; Dubonos, S. V.; Grigorieva, I. V.; Firsov, A. A. Electric Field Effect in Atomically Thin Carbon Films Science 2004, 306, 666-669 10.1126/science.1102896
4. Han, M. Y.; Özyilmaz, B.; Zhang, Y.; Kim, P. Energy Band-Gap Engineering of Graphene Nanoribbons Phys. Rev. Lett. 2007, 98, 206805 10.1103/PhysRevLett.98.206805
5. Bolotin, B. I.; Sikes, K. J.; Jiang, Z.; Klima, M.; Fudenberg, G.; Hone, J.; Kim, P.; Stormer, H. L. Ultrahigh Electron Mobility in Suspended Graphene Solid State Commun. 2008, 146, 351-355 10.1016/j.ssc.2008.02.024
6. Coleman, J. N.; Lotya, M.; O'Neill, A.; Bergin, S. D.; King, P. J.; Khan, U.; Young, K.; Gaucher, A.; De, S.; Smith, R. J.; Shvets, I. V.; Arora, S. K.; Stanton, G.; Kim, H.-Y.; Lee, K.; Kim, G. T.; Duesberg, G. S.; Hallam, T.; Boland, J. J.; Wang, J. J.; Donegan, J. F.; Grunlan, J. C.; Moriarty, G.; Shmeliov, A.; Nicholls, R. J.; Perkins, J. M.; Grieveson, E. M.; Theuwissen, K.; McComb, D. W.; Nellist, P. D.; Nicolosi, V. Two-Dimensional Nanosheets Produced by Liquid Exfoliation of Layered Materials Science 2011, 331, 568-571 10.1126/science.1194975
7. Wang, Q. H.; Kalantar-Zadeh, K.; Kis, A.; Coleman, J. N.; Strano, M. S. Electronics and Optoelectronics of Two-Dimensional Transition Metal Dichalcogenides Nat. Nanotechnol. 2012, 7, 699-712 10.1038/nnano.2012.193
8. Chhowalla, M.; Shin, H. S.; Eda, G.; Li, L.-J.; Loh, K. P.; Zhang, H. The chemistry of Two-dimensional Layered Transition Metal Dichalcogenide Nanosheets Nat. Chem. 2013, 5, 263-275 10.1038/nchem.1589
9. Kuc, A.; Zibouche, N.; Heine, T. Influence of quantum confinement on the electronic structure of the transition metal sulfide TS2 Phys. Rev. B: Condens. Matter Mater. Phys. 2011, 83, 245213 10.1103/PhysRevB.83.245213
10. Zhang, M.; Wu, J.; Zhu, Y.; Dumcenco, D. O.; Hong, J.; Mao, N.; Deng, S.; Chen, Y.; Yang, Y.; Jin, C.; Chaki, S. H.; Huang, Y.-S.; Zhang, J.; Xie, L. Two-Dimensional Molybdenum Tungsten Diselenide Alloys: Photoluminescence, Raman Scattering,and Electrical Transport ACS Nano 2014, 8, 7130-7137 10.1021/nn5020566
11. Li, T.; Galli, G. Electronic Properties of MoS2 Nanoparticles J. Phys. Chem. C 2007, 111, 16192-16196 10.1021/jp075424v
12. Radisavljevic, B.; Radenovic, A.; Brivio, J.; Giacometti, V.; Kis, A. Single-layer MoS2 Transistor Nat. Nanotechnol. 2011, 6, 147-150 10.1038/nnano.2010.279
13. Mak, K. F.; Lee, C.; Hone, J.; Shan, J.; Heinz, T. F. Atomically Thin MoS2: A New Direct-Gap Semiconductor Phys. Rev. Lett. 2010, 105, 136805 10.1103/PhysRevLett.105.136805
14. Lee, H. S.; Min, S.-W.; Chang, Y.-G.; Park, M. K.; Nam, T.; Kim, H.; Kim, J. H.; Ryu, S.; Im, S. MoS2 Nanosheet Phototransistors with Thickness-Modulated Optical Energy Gap Nano Lett. 2012, 12, 3695-3700 10.1021/nl301485q
15. Splendiani, A.; Sun, L.; Zhang, Y.; Li, T.; Kim, J.; Chim, C.; Galli, G.; Wang, F. Emerging Photoluminescence in Monolayer MoS2 Nano Lett. 2010, 10, 1271-1275 10.1021/nl903868w
16. Choi, K.; Raza, S. R. A.; Lee, H. S.; Jeon, P. J.; Pezeshki, A.; Min, S.; Kim, J. S.; Yoon, W.; Ju, S.; Lee, K.; Im, S. Trap density probing on top-gate MoS2 nanosheet field-effect transistors by photo-excited charge collection spectroscopy Nanoscale 2015, 7, 5617-5623 10.1039/C4NR06707J
17. Kim, J. S.; Lee, H. S.; Jeon, P. J.; Lee, Y. T.; Yoon, W.; Ju, S.; Im, S. Multifunctional Schottky-Diode Circuit Comprising Palladium/Molybdenum Disulfide Nanosheet Small 2014, 10, 4845-4850 10.1002/smll.201401046
18. Churchill, H. O. H.; Jarillo-Herrero, P. Two-dimensional crystals: Phosphorus joins the family. Nat Nat. Nanotechnol. 2014, 9, 330-331 10.1038/nnano.2014.85
19. Fei, R.; Yang, L. Strain-engineering the anisotropic electrical conductance of few-layer black phosphorus Nano Lett. 2014, 14, 2884-2889 10.1021/nl500935z
20. Li, L.; Yu, Y.; Ye, G. J.; Ge, Q.; Ou, X.; Wu, H.; Feng, D.; Chen, X. H.; Zhang, Y. Black phosphorus field-effect transistors Nat. Nanotechnol. 2014, 9, 372-377 10.1038/nnano.2014.35
21. Castellanos-Gomez, A.; Vicarelli, L.; Prada, E.; Island, J. O.; Narasimha-Acharya, K. L.; Blanter, S. I.; Groenendijk, D. J.; Buscema, M.; Steele, G. A.; Alvarez, J. V.; Zandbergen, H. W.; Palacios, J. J.; Van der Zant, H. S. J. Isolation and Characterization of Few-Layer Black Phosphorus 2D Mater. 2014, 1, 025001 10.1088/2053-1583/1/2/025001
22. Lu, W.; Nan, H.; Hong, J.; Chen, Y.; Zhu, C.; Liang, Z.; Ma, X.; Ni, Z.; Jin, C.; Zhang, Z. Plasma-assisted fabrication of monolayer phosphorene and its Raman characterization Nano Res. 2014, 7, 853-589 10.1007/s12274-014-0446-7
23. Zhu, W.; Yogeesh, M. N.; Yang, S.; Aldave, S. H.; Kim, J.-S.; Sonde, S.; Tao, L.; Lu, N.; Akinwande, D. Flexible Black Phosphorus Ambipolar Transistors, Circuits and AM Demodulator Nano Lett. 2015, 15, 1883-1890 10.1021/nl5047329
24. Wei, Q.; Peng, X. Superior mechanical flexibility of phosphorene and few-layer black phosphorus Appl. Phys. Lett. 2014, 104, 251915 10.1063/1.4885215
25. Na, J.; Lee, Y. T.; Lim, J. A.; Hwang, D. K.; Kim, G.; Choi, W. K.; Song, Y. Few-Layer Black Phosphorus Field-Effect Transistors with Reduced Current Fluctuation ACS Nano 2014, 8, 11753-11762 10.1021/nn5052376
26. Avsar, A.; Vera-Marun, I. J.; Tan, J. Y.; Watanabe, K.; Taniguchi, T.; Neto, A. H. C.; Özyilmaz, B. Air-Stable Transport in Graphene-Contacted, Fully Encapsulated Ultrathin Black Phosphorus-Based Field-Effect Transistors ACS Nano 2015, 9, 4138-4145 10.1021/acsnano.5b00289
27. Wood, J. D.; Wells, S. A.; Jariwala, D.; Chen, K.-S.; Cho, E.; Sangwan, V. K.; Liu, X.; Lauhon, L. J.; Marks, T. J.; Hersam, M. C. Effective Passivation of Exfoliated Black Phosphorus Transistors against Ambient Degradation Nano Lett. 2014, 14, 6964-6970 10.1021/nl5032293
28. Liu, H.; Neal, A. T.; Si, M.; Du, Y.; Ye, P. D. The Effect of Dielectric Capping on Few-Layer Phosphorene Transistors: Tuning the Schottky Barrier Heights IEEE Electron Device Lett. 2014, 35, 795-797 10.1109/LED.2014.2323951
29. Wang, H.; Wang, X.; Xia, F.; Wang, L.; Jiang, H.; Xia, Q.; Chin, M. L.; Dubey, M.; Han, S. Black Phosphorus Radio-Frequency Transistors Nano Lett. 2014, 14, 6424-6429 10.1021/nl5029717
30. Liu, H.; Neal, A. T.; Zhu, Z.; Luo, Z.; Xu, X.; Tománek, D.; Ye, P. D. Phosphorene: An Unexplored 2D Semiconductor with a High Hole Mobility ACS Nano 2014, 8, 4033-4041 10.1021/nn501226z
31. Xia, F.; Wang, H.; Jia, Y. Rediscovering black phosphorus as an anisotropic layered material for optoelectronics and electronics Nat. Commun. 2014, 5, 4458 10.1038/ncomms5458
32. Buscema, M.; Groenendijk, D. J.; Blanter, S. I.; Steele, G. A.; van der Zant, H. S. J.; Castellanos-Gomez, A. Fast and Broadband Photoresponse of Few-Layer Black Phosphorus Field-Effect Transistors Nano Lett. 2014, 14, 3347-3352 10.1021/nl5008085
33. Du, Y.; Liu, H.; Deng, Y.; Ye, P. D. Device Perspective for Black Phosphorus Field-Effect Transistors Contact Resistance Ambipolar Behavior and Scaling ACS Nano 2014, 8, 10035-10042 10.1021/nn502553m
34. Koenig, S. P.; Doganov, R. A.; Schmidt, H.; Neto, A. H. C.; Özyilmaz, B. Electric field effect in ultrathin black phosphorus Appl. Phys. Lett. 2014, 104, 103106 10.1063/1.4868132
35. Servati, P.; Karim, K. S.; Nathan, A. Static Characteristics of a-Si:H Dual-Gate TFTs IEEE Trans. Electron Devices 2003, 50, 926-932 10.1109/TED.2003.812481
36. Park, C. H.; Im, S. Threshold voltage control in dual gate ZnO-based thin-film transistors operating at 5 V J. Phys. D: Appl. Phys. 2008, 41, 245112 10.1088/0022-3727/41/24/245112
37. Baek, G.; Abe, K.; Kuo, A.; Kumomi, H.; Kanicki, J. Electrical Properties and Stability of Dual-Gate Coplanar Homojunction DC Sputtered Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistors and Its Application to AM-OLEDs IEEE Trans. Electron Devices 2011, 58, 4344-4353 10.1109/TED.2011.2168528
38. Nam, S. H.; Jeon, P. J.; Lee, Y. T.; Raza, S. R. A.; Im, S. NOT and NOR Logic Circuits Using Passivation Dielectric Involved Dual Gate in a-InGaZnO TFTs IEEE Electron Device Lett. 2013, 34, 1527-1529 10.1109/LED.2013.2285185
39. Akahama, Y.; Kobayashi, M.; Kawamura, H. Raman study of black phosphorus up to 13 GPa Solid State Commun. 1997, 104, 311-315 10.1016/S0038-1098(97)00325-6