Two-dimensional molybdenum tungsten diselenide alloys: Photoluminescence, Raman scattering, and electrical transport

ACS Nano

Volumn 8, Issue 7, 2014, Pages 7130-7137

  Zhang, Mei ^a   Wu, Juanxia ^b,c   Zhu, Yiming ^a   Dumcenco, Dumitru O ^d,g   Hong, Jinhua ^e   Mao, Nannan ^a,b   Deng, Shibin ^b   Chen, Yanfeng ^a   Yang, Yanlian ^a   Jin, Chuanhong ^e   Chaki, Sunil H ^f   Huang, Ying Sheng ^d   Zhang, Jin ^b   Xie, Liming ^a  

^a NATIONAL CENTER FOR NANOSCIENCE AND TECHNOLOGY   (China)

^b PEKING UNIVERSITY   (China)

^c PEKING UNIVERSITY   (China)

^d NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

^e ZHEJIANG UNIVERSITY   (China)

^f SARDAR PATEL UNIVERSITY   (India)

^g EPFL   (Switzerland)

Author keywords

electrical property; photoluminescence; Raman effect; semiconductor alloy; transition metal dichalcogenide; tunable band gap

Indexed keywords

ALLOYS; ELECTRIC PROPERTIES; ENERGY GAP; MOLYBDENUM; MONOLAYERS; PHOTOLUMINESCENCE; RAMAN SCATTERING; RAMAN SPECTROSCOPY; SELENIUM COMPOUNDS; SEMICONDUCTING SELENIUM COMPOUNDS; TRANSITION METALS; TUNGSTEN;

ELECTRICAL TRANSPORT; ELECTRICAL TRANSPORT MEASUREMENTS; ELECTRICAL TRANSPORT PROPERTIES; PHOTOLUMINESCENCE EMISSION; POLARIZED RAMAN SPECTROSCOPY; SEMI-CONDUCTOR ALLOYS; TRANSITION-METAL DICHALCOGENIDE; TUNABLE BAND-GAP;

MOLYBDENUM ALLOYS;

EID: 84904723849     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn5020566     Document Type: Article

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