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Volumn 7, Issue 6, 2014, Pages 853-859

Plasma-assisted fabrication of monolayer phosphorene and its Raman characterization

Author keywords

Mechanical cleavage; monolayer phosphorene; optical contrast; plasma thinning; Raman spectroscopy; two dimensional semiconductor

Indexed keywords


EID: 84902344446     PISSN: 19980124     EISSN: 19980000     Source Type: Journal    
DOI: 10.1007/s12274-014-0446-7     Document Type: Article
Times cited : (680)

References (27)
  • 4
    • 67649225738 scopus 로고    scopus 로고
    • Graphene: Status and prospects
    • Geim, A. K. Graphene: Status and prospects. Science2009, 324, 1530-1534.
    • (2009) Science , vol.324 , pp. 1530-1534
    • Geim, A.K.1
  • 5
    • 84875825798 scopus 로고    scopus 로고
    • Graphene-like two-dimensional materials
    • Xu, M. S.; Liang, T.; Shi, M. M.; Chen, H. Z. Graphene-like two-dimensional materials. Chem. Rev. 2013, 113, 3766-3798.
    • (2013) Chem. Rev. , vol.113 , pp. 3766-3798
    • Xu, M.S.1    Liang, T.2    Shi, M.M.3    Chen, H.Z.4
  • 11
    • 84894608525 scopus 로고    scopus 로고
    • Electronic transport and device prospects of monolayer molybdenum disulphide grown by chemical vapour deposition
    • Zhu, W. J.; Low, T.; Lee, Y.-H.; Wang, H.; Farmer, D. B.; Kong, J.; Xia, F. N.; Avouris, P. Electronic transport and device prospects of monolayer molybdenum disulphide grown by chemical vapour deposition. Nat. Commun. 2014, 5, 3087.
    • (2014) Nat. Commun. , vol.5 , pp. 3087
    • Zhu, W.J.1    Low, T.2    Lee, Y.-H.3    Wang, H.4    Farmer, D.B.5    Kong, J.6    Xia, F.N.7    Avouris, P.8
  • 12
    • 0022698886 scopus 로고
    • Semiconducting black phosphorus
    • Morita, A. Semiconducting black phosphorus. Appl. Phys. A1986, 39, 227-242.
    • (1986) Appl. Phys. A , vol.39 , pp. 227-242
    • Morita, A.1
  • 13
    • 84869387852 scopus 로고
    • Electronic band structure of black phosphorus studied by angle-resolved ultraviolet photoelectron spectroscopy
    • Takahashi, T.; Tokailin, H.; Suzuki, S.; Sagawa, T.; Shirotani, I. Electronic band structure of black phosphorus studied by angle-resolved ultraviolet photoelectron spectroscopy. J. Phys. C: Solid State Phys. 1985, 18, 825.
    • (1985) J. Phys. C: Solid State Phys. , vol.18 , pp. 825
    • Takahashi, T.1    Tokailin, H.2    Suzuki, S.3    Sagawa, T.4    Shirotani, I.5
  • 17
    • 34948892768 scopus 로고    scopus 로고
    • Graphene thickness determination using reflection and contrast spectroscopy
    • Ni, Z. H.; Wang, H. M.; Kasim, J.; Fan, H. M.; Yu, T.; Wu, Y. H.; Feng, Y. P.; Shen, Z. X. Graphene thickness determination using reflection and contrast spectroscopy. Nano Lett. 2007, 7, 2758-2763.
    • (2007) Nano Lett. , vol.7 , pp. 2758-2763
    • Ni, Z.H.1    Wang, H.M.2    Kasim, J.3    Fan, H.M.4    Yu, T.5    Wu, Y.H.6    Feng, Y.P.7    Shen, Z.X.8
  • 19
    • 30244439305 scopus 로고
    • Raman and infrared reflection spectroscopy in black phosphorus
    • Sugai, S.; Shirotani, I. Raman and infrared reflection spectroscopy in black phosphorus. Solid State Commun. 1985, 53, 753-755.
    • (1985) Solid State Commun. , vol.53 , pp. 753-755
    • Sugai, S.1    Shirotani, I.2
  • 22
    • 84863707142 scopus 로고    scopus 로고
    • Effect of van der Waals interactions on the structural and elastic properties of black phosphorus
    • Appalakondaiah, S.; Vaitheeswaran, G.; Lebègue, S.; Christensen, N. E.; Svane, A. Effect of van der Waals interactions on the structural and elastic properties of black phosphorus. Phys. Rev. B2012, 86, 035105.
    • (2012) Phys. Rev. B , vol.86 , pp. 035105
    • Appalakondaiah, S.1    Vaitheeswaran, G.2    Lebègue, S.3    Christensen, N.E.4    Svane, A.5
  • 23
    • 0019623997 scopus 로고
    • Pressure dependence of the lattice vibration in the orthorhombic and rhombohedral structures of black phosphorus
    • Sugai, S.; Ueda, T.; Murase, K. Pressure dependence of the lattice vibration in the orthorhombic and rhombohedral structures of black phosphorus. J. Phys. Soc. Jpn. 1981, 50, 3356-3361.
    • (1981) J. Phys. Soc. Jpn. , vol.50 , pp. 3356-3361
    • Sugai, S.1    Ueda, T.2    Murase, K.3
  • 24
    • 84904645720 scopus 로고    scopus 로고
    • Few-layer black phosphorus: Emerging 2D semiconductor with high carrier mobility and linear dichroism
    • Qiao, J. S.; Kong, X. H.; Hu, Z.-X.; Yang, F.; Ji, W. Few-layer black phosphorus: Emerging 2D semiconductor with high carrier mobility and linear dichroism. arXiv preprint, 2014, arXiv: 1401. 5045.
    • (2014) ArXiv Preprint
    • Qiao, J.S.1    Kong, X.H.2    Hu, Z.-X.3    Yang, F.4    Ji, W.5
  • 26
    • 79955836310 scopus 로고    scopus 로고
    • Reliably counting atomic planes of few-layer graphene (n > 4)
    • Koh, Y. K.; Bae, M.-H.; Cahill, D. G.; Pop, E. Reliably counting atomic planes of few-layer graphene (n > 4). ACS Nano2010, 5, 269-274.
    • (2010) ACS Nano , vol.5 , pp. 269-274
    • Koh, Y.K.1    Bae, M.-H.2    Cahill, D.G.3    Pop, E.4
  • 27
    • 0019624072 scopus 로고
    • Electronic structure of black phosphorus in tight binding approach
    • Takao, Y.; Asahina, H.; Morita, A. Electronic structure of black phosphorus in tight binding approach. J. Phys. Soc. Jpn. 1981, 50, 3362-3369.
    • (1981) J. Phys. Soc. Jpn. , vol.50 , pp. 3362-3369
    • Takao, Y.1    Asahina, H.2    Morita, A.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.