Static characteristics of a-Si:H dual-gate TFTs

IEEE Transactions on Electron Devices

Volumn 50, Issue 4, 2003, Pages 926-932

  Servati, Peyman ^a   Karim, Karim S ^a   Nathan, Arokia ^a  

^a UNIVERSITY OF WATERLOO   (Canada)

Author keywords

Amorphous silicon; Dual gate thin film transistors (TFTs)

Indexed keywords

AMORPHOUS SILICON; DISPLAY DEVICES; ELECTRIC POTENTIAL; GATES (TRANSISTOR); HYDROGENATION; LEAKAGE CURRENTS; THRESHOLD VOLTAGE;

DUAL-GATE THIN-FILM TRANSISTORS (TFT);

THIN FILM TRANSISTORS;

EID: 0038494754     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2003.812481     Document Type: Article

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