Electrical properties and stability of dual-gate coplanar homojunction DC sputtered amorphous indium-gallium-zinc-oxide thin-film transistors and its application to AM-OLEDs

IEEE Transactions on Electron Devices

Volumn 58, Issue 12, 2011, Pages 4344-4353

  Baek, Gwanghyeon ^a   Abe, Katsumi ^b   Kuo, Alex ^a   Kumomi, Hideya ^b   Kanicki, Jerzy ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

^b CANON INC   (Japan)

Author keywords

Active matrix organic light emitting display (AM OLED); amorphous indium gallium zinc oxide (a IGZO); coplanar homojuction; dual gate (DG); thin film transistor (TFT)

Indexed keywords

ACTIVE MATRIXES; BOTTOM GATE; COPLANAR HOMOJUCTION; DEVICE STRUCTURES; DUAL GATES; ELECTRICAL CHARACTERISTIC; ELECTRICAL PERFORMANCE; FIELD-EFFECT MOBILITIES; GLASS SUBSTRATES; HOMOJUNCTION; NEGATIVE BIAS; OFF CURRENT; ORGANIC LIGHT-EMITTING; SUBTHRESHOLD SWING; TOP GATE; TRANSFER CURVES;

AMORPHOUS FILMS; BIAS VOLTAGE; DISPLAY DEVICES; ELECTRIC PROPERTIES; FIELD EFFECT TRANSISTORS; GALLIUM; GALLIUM ALLOYS; INDIUM; LIGHT EMISSION; SEMICONDUCTING ORGANIC COMPOUNDS; SUBSTRATES; ZINC;

THIN FILM TRANSISTORS;

EID: 82155166229     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2011.2168528     Document Type: Article

References (33)

1. J.-H. Lee, D.-H. Kim, D.-J. Yang, S.-Y. Hong, K.-S. Yoon, P.-S. Hong, C.-O. Jeong, H.-S. Park, S.Y. Kim, S.K. Lim, S.S. Kim, K.-S. Son, T.-S. Kim, J.-Y. Kwon, and S.-Y. Lee, "42.2: World's largest (15-inch) XGA AMLCD panel using IGZO oxide TFT," in Proc. SID Symp. Dig. Tech. Papers, 2008, vol. 39, pp. 625-628.
2. J. K. Jeong, J. H. Jeong, J. H. Choi, J. S. Im, S. H. Kim, H. W. Yang, K. N. Kang, K. S. Kim, T. K. Ahn, H.-J. Chung, M. Kim, B. S. Gu, J.-S. Park, Y.-G.Mo, H. D. Kim, and H. K. Chung, "3.1: Distinguished Paper: 12.1-Inch WXGA AMOLED display driven by indium-gallium-zinc oxide TFTs array," in Proc. SID Symp. Dig. Tech. Papers, 2008, vol. 39, pp. 1-4.
3. K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, "Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors," Nature, vol. 432, no. 7016, pp. 488-492, Nov. 2004.
4. H. Kumomi, S. Yaginuma, H. Omura, A. Goyal, A. Sato, M. Watanabe, M. Shimada, N. Kaji, K. Takahashi, M. Ofuji, T. Watanabe, N. Itagaki, H. Shimizu, K. Abe, Y. Tateishi, H. Yabuta, T. Iwasaki, R. Hayashi, T. Aiba, and M. Sano, "Materials, devices, and circuits of transparent amorphous-oxide semiconductor," J. Display Technol., vol. 5, no. 12, pp. 531-540, Dec. 2009.
5. T. Kamiya, K. Nomura, and H. Hosono, "Origins of high mobility and low operation voltage of amorphous oxide TFTs: Electronic structure, electron transport, defects and doping *," J. Display Technol., vol. 5, no. 12, pp. 468-483, Dec. 2009.
6. F. Balestra, S. Cristoloveanu, M. Benachir, J. Brini, and T. Elewa, "Double-gate silicon-on-insulator transistor with volume inversion: A new device with greatly enhanced performance," IEEE Electron Device Lett., vol. EDL-8, no. 9, pp. 410-412, Sep. 1987.
7. R. A. Street, X. D. Wu, R. Weisfield, S. Ready, R. Apte, M. Ngyuen, W. B. Jackson, and P. Nylen, "Two-dimensional amorphous silicon image sensor arrays," J. Non-Cryst. Solids, vol. 198-200, pp. 1151-1154, May 1996.
8. M. J. Lee, C. P. Judge, and S.W. Wright, "Thin film transistors for displays on plastic substrates," Solid State Electron., vol. 44, no. 8, pp. 1431-1434, Aug. 2000.
9. P. Servati, K. S. Karim, and A. Nathan, "Static characteristics of a-Si:H dual-gate TFTs," IEEE Trans. Electron Devices, vol. 50, no. 4, pp. 926-932, Apr. 2003.
10. K. S. Karim, A. Nathan, J. A. Rowlands, and S. O. Kasap, "X-ray detector with on-pixel amplification for large area diagnostic medical imaging," Proc. Inst. Elect. Eng.-Circuits, Devices Syst., vol. 150, no. 4, pp. 267-273, Aug. 2003.
11. K. Takechi, M. Nakata, K. Azuma, H. Yamaguchi, and S. Kaneko, "Dual-gate characteristics of amorphous InGaZnO4 thin-film transistors as compared to those of hydrogenated amorphous silicon thin-film transistors," IEEE Trans. Electron Devices, vol. 56, no. 9, pp. 2027-2033, Sep. 2009.
12. H. Lim, H. Yin, J.-S. Park, I. Song, C. Kim, J. Park, S. Kim, S.-W. Kim, C. B. Lee, Y. C. Kim, Y. S. Park, and D. Kang, "Double gate GaInZnO thin film transistors," Appl. Phys. Lett., vol. 93, no. 6, pp. 063 505-1-063 505-3, Aug. 2008.
13. J.-H. Choi, H.-S. Seo, and J.-M. Myoung, "Dual-gate InGaZnO thin-film transistors with organic polymer as a dielectric layer," Electrochem. Solid-State Lett., vol. 12, no. 4, pp. H145-H148, 2009.
14. K. Takechi, M. Nakata, T. Eguchi, H. Yamaguchi, and S. Kaneko, "Study on current crowding in the output characteristics of amorphous InGaZnO4 thin-film transistors using dual-gate structures with various active-layer thicknesses," Jpn. J. Appl. Phys., vol. 48, no. 8, p. 081 606, Aug. 2009.
15. K.-S. Son, J.-S. Jung, K.-H. Lee, T.-S. Kim, J.-S. Park, Y.-H. Choi, J.-Y. Kwon, and S.-Y. Lee, "5.3: Improvement of bias stability and transfer characteristics by using double gate GaInZnO TFTs," in Proc. Eurodisplay, Rome, Italy, 2009.
16. A. Sato, K. Abe, R. Hayashi, H. Kumomi, K. Nomura, T. Kamiya, M. Hirano, and H. Hosono, "Amorphous In-Ga-Zn-O coplanar homojunction thin-film transistor," Appl. Phys. Lett., vol. 94, no. 13, p. 133 502, Mar. 2009.
17. A. Sato, M. Shimada, K. Abe, R. Hayashi, H. Kumomi, K. Nomura, T. Kamiya, M. Hirano, and H. Hosono, "Amorphous In-Ga-Zn-O thinfilm transistor with coplanar homojunction structure," Thin Solid Films, vol. 518, no. 4, pp. 1309-1313, Dec. 2009.
18. D. P. Gosain and T. Tanaka, "Instability of amorphous indium gallium zinc oxide thin film transistors under light illumination," Jpn. J. Appl. Phys., vol. 48, no. 3, p. 03B 018, Mar. 2009.
19. T.-C. Fung, C.-S. Chuang, K. Nomura, H.-P. D. Shieh, H. Hosono, and J. Kanicki, "Photofield-effect in amorphous In-Ga-Zn-O (a-IGZO) thinfilm transistors," J. Inf. Display, vol. 9, no. 4, pp. 21-29, Dec. 2008.
20. J. Kanicki, F. R. Libsch, J. Griffith, and R. Polastre, "Performance of thin hydrogenated amorphous silicon thin-film transistors," J. Appl. Phys., vol. 69, no. 4, pp. 2339-2345, Feb. 1991.
21. T.-C. Fung, C.-S. Chuang, C. Chen, K. Abe, R. Cottle, M. Townsend, H. Kumomi, and J. Kanicki, "Two-dimensional numerical simulation of radio frequency sputter amorphous In-Ga-Zn-O thin-film transistors," J. Appl. Phys., vol. 106, no. 8, p. 084 511, Oct. 2009.
22. P. Ranade, Y.-C. Yeo, Q. Lu, H. Takeuchi, T.-J. King, and C. Hu, "Molybdenum as a gate electrode for deep sub-micron CMOS technology," in Proc. Mater. Res. Soc. Symp., 2000, vol. 611, p. C3.2.1.
23. T.-C. Fung, K. Abe, H. Kumomi, and J. Kanicki, "Electrical instability of RF sputter amorphous In-Ga-Zn-O thin-film transistors," J. Display Technol., vol. 5, no. 12, pp. 452-461, Dec. 2009.
24. G. Baek, A. Kuo, J. Kanicki, K. Abe, and H. Kumomi, "P-11: Electrical properties and stability of dual-gate coplanar homojunction amorphous indium-gallium-zinc-oxide thin-film transistor," in Proc. Soc. Inf. Display, Los Angeles, CA, 2011, pp. 1136-1139.
25. K. Abe, K. Takahashi, A. Sato, H. Kumomi, K. Nomura, T. Kamiya, J. Kanicki, and H. Hosono, "Analysis of current-voltage characteristics and electrical stress instabilities in amorphous In-Ga-Zn-O dual-gate TFTs," IEEE Trans. Electron Devices, submitted for publication.
26. H. S. P. Wong, "Beyond the conventional transistor," IBM J. Res. Develop., vol. 46, no. 2/3, pp. 133-168, Mar. 2002.
27. F. R. Libsch and J. Kanicki, "A new threshold voltage shift estimation method for bias-temperature stress of amorphous silicon thin-film transistors," in Proc. Jpn. Display, 1992, pp. 443-446.
28. Y. Kaneko, K. Tsutsui, and T. Tsukada, "Back-bias effect on the current-voltage characteristics of amorphous silicon thin-film transistors," J. Non-Crystal. Solids, vol. 149, no. 3, pp. 264-268, Nov. 1992.
29. M. Orita, H. Tanji, M. Mizuno, H. Adachi, and I. Tanaka, "Mechanism of electrical conductivity of transparent InGaZnO4," Phys. Rev. B, Condens. Matter, vol. 61, no. 3, pp. 1811-1816, Jan. 2000.
30. K. Kobayashi, Y. Kohno, Y. Tomita, Y. Maeda, and S. Matsushima, "Possibility for hole doping into amorphous InGaZnO4 films prepared by RF sputtering," Phys. Stat. Sol. (C), vol. 8, no. 2, pp. 531-533, Feb. 2011.
31. H.-K. Lim and J. G. Fossum, "Threshold voltage of thin-film silicon-oninsulator (SOI) MOSFETs," IEEE Trans. Electron Devices, vol. ED-30, no. 10, pp. 1244-1251, Oct. 1983.
32. T. P. Brody, F. C. Luo, Z. P. Szepesi, and D. H. Davies, "A 6 × 6-in 20-lpi electroluminescent display panel," IEEE Trans. Electron Devices, vol. ED-22, no. 9, pp. 739-748, Sep. 1975.
33. H. Lee, C.-S. Chiang, and J. Kanicki, "Dynamic response of normal and corbino a-Si:H TFTs for AM-OLEDs," IEEE Trans. Electron Devices, vol. 55, no. 9, pp. 2338-2347, Sep. 2008.