Raman study of black phosphorus up to 13 GPa

Solid State Communications

Volumn 104, Issue 6, 1997, Pages 311-315

  Akahama, Y ^a   Kobayashi, M ^a   Kawamura, H ^a  

^a UNIVERSITY OF HYOGO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; HALL EFFECT; METALLIZING; PHOSPHORUS; RAMAN SCATTERING; SINGLE CRYSTALS; TRANSPORT PROPERTIES;

SEMICONDUCTOR BLACK PHOSPHORUS;

SEMICONDUCTOR MATERIALS;

EID: 0031276914     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(97)00325-6     Document Type: Article

References (23)

1. Keys, R.W., Phys. Rev., 92, 1953, 580.
2. Brown, A., and Rundquist, S., Acta Cryst., 19, 1965, 684.
3. Shirotani, I., Maniwa, R., Sato, H., Fukizawa, A., Sato, N., Maruyama, Y., Kajiwara, T., Inokuchi, H. and Akimoto, S., Nippon Kagaku Kaishi, No. 10, 1981, 1604 (in Japanese).
4. Endo, S., Akahama, Y., Terada, S. and Narita, S., Jpn. J. Appl. Phys., 21, 1982, L482.
5. Morita, A., Appl. Phys., A39, 1986, 227 (and references therein).
6. Jamieson, J.C., Science, 139, 1963, 1291.
7. Kikegawa, T., Iwasaki, H., Fujimura, T., Endo, S., Akahama, Y., Akai, T., Shimomura, O., Yagi, T., Akimoto, S. and Shirotani, I., J. Appl. Cryst., 20, 1987, 406.
8. Akai, T., Endo, S., Akahama, Y., Koto, K. and Maruyama, Y., High Pressure Research, 1, 1989, 115.
9. Kawamura, H., Shirotani, I. and Tachikawa, K., Solid State Commun., 49, 1984, 879.
10. Wittig, J., Bireckoven, B. and Weidlich, T., in Solid State Physics under High Pressure; Recent Advance with Anvil Devices (Edited by S. Minomura), p. 217. KTK Scientific Publisher, Tokyo, 1985.
11. Akahama, Y., Endo, S. and Narita, S., Physica, 139&140B, 1986, 397.
12. Yamada, Y., Fujii, Y., Akahama, Y., Endo, S., Narita, S., Axe, J.D. and McWhan, D.B., Phys. Rev., B30, 1984, 2410.
13. Kôzuki, Y., Hanayama, Y., Kimura, M., Nishitake, T. and Endo, S., J. Phys. Soc. Jpn., 60, 1991, 1612.
14. Aoki, M. and Suzuki, N., J. Phys. Soc. Jpn., 56, 1987, 2433.
15. Sugai, S., Ueda, T. and Murase, K., J. Phys. Soc. Jpn., 50, 1981, 3356.
16. Sugai, S. and Shirotani, I., Solid State Commun., 53, 1985, 753.
17. Beister, H.J., Strössner, K. and Syassen, K., Phys. Rev., B41, 1990, 5535.
18. Akahama, Y. and Kawamura, H., Phys. Rev., B54, 1996, R15602.
19. Mao, H.K., Bell, P.M., Shaner, J.W. and Steinberg, D.J., J. Appl. Phys., 49, 1978, 3276.
20. Lannin, J.S. and Shanabrook, B.V., in Physics of Semiconductors, IOP Conf. Proc. Ser. No. 43 (Edited by B.L.H. Wilson), Chap. 20, p. 643. IOP, London, 1979.
21. Vanderborgh, C.A. and Schiferl, D., Phys. Rev., B40, 1989, 9595.
22. Zitter, R.N., in The Physics of Semimetals and Narrowgap Semiconductors (Edited by Carter and Bate), p. 285. Pergamon Press, 1971.
23. Iwasaki, H. and Kikegawa, T., Solid State Physics, 29, 1994, 961 (in Japanese).