Air Stable Doping and Intrinsic Mobility Enhancement in Monolayer Molybdenum Disulfide by Amorphous Titanium Suboxide Encapsulation

Nano Letters

Volumn 15, Issue 7, 2015, Pages 4329-4336

  Rai, Amritesh ^a   Valsaraj, Amithraj ^a   Movva, Hema C P ^a   Roy, Anupam ^a   Ghosh, Rudresh ^a   Sonde, Sushant ^a   Kang, Sangwoo ^a   Chang, Jiwon ^b   Trivedi, Tanuj ^a   Dey, Rik ^a   Guchhait, Samaresh ^a   Larentis, Stefano ^a   Register, Leonard F ^a   Tutuc, Emanuel ^a   Banerjee, Sanjay K ^a  

^a The University of Texas at Austin   (United States)

^b SEMATECH   (United States)

Author keywords

amorphous titanium suboxide (ATO); contact resistance; doping; field effect transistor; high dielectric; intrinsic mobility; Molybdenum disulfide (MoS2< inf>); Schottky barrier

Indexed keywords

CALCULATIONS; CHARGE TRANSFER; CONTACT RESISTANCE; DENSITY FUNCTIONAL THEORY; DOPING (ADDITIVES); FIELD EFFECT TRANSISTORS; MOLYBDENUM; MOLYBDENUM COMPOUNDS; MONOLAYERS; OXYGEN VACANCIES; SCHOTTKY BARRIER DIODES; SULFUR COMPOUNDS; TITANIUM; TRANSITION METAL COMPOUNDS; TRANSITION METALS;

AB-INITIO DENSITY FUNCTIONAL THEORY CALCULATIONS (DFT); DIELECTRIC ENGINEERING; FIELD-EFFECT MOBILITIES; INTERFACIAL OXYGEN; MOBILITY ENHANCEMENT; MOLYBDENUM DISULFIDE; SCHOTTKY BARRIERS; TRANSITION METAL DICHALCOGENIDES;

SEMICONDUCTOR DOPING;

EID: 84936750084     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/acs.nanolett.5b00314     Document Type: Article

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