Oxidized titanium as a gate dielectric for graphene field effect transistors and its tunneling mechanisms

ACS Nano

Volumn 8, Issue 10, 2014, Pages 10480-10485

  Corbet, Chris M ^a   McClellan, Connor ^a   Kim, Kyounghwan ^a   Sonde, Sushant ^a   Tutuc, Emanuel ^a   Banerjee, Sanjay K ^a  

^a The University of Texas at Austin   (United States)

Author keywords

dielectric; gate leakage; graphene; seed layer; titanium oxide; transistor

Indexed keywords

CONDUCTION BANDS; DIELECTRIC MATERIALS; GATE DIELECTRICS; GRAPHENE; GRAPHENE TRANSISTORS; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; LEAKAGE CURRENTS; PHOTOELECTRON SPECTROSCOPY; PHYSICAL VAPOR DEPOSITION; TEMPERATURE; TITANIUM DIOXIDE; TITANIUM METALLOGRAPHY; TITANIUM OXIDES; TRANSISTORS;

ELECTRICAL CHARACTERIZATION; GATE LEAKAGES; GATE-LEAKAGE CURRENT; GRAPHENE FIELD-EFFECT TRANSISTORS; SEED LAYER; TUNNELING MECHANISM; VAPOR-DEPOSITION TECHNIQUES; X RAY PHOTOEMISSION SPECTROSCOPY;

FIELD EFFECT TRANSISTORS;

EID: 84908423944     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn5038509     Document Type: Article

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