Self-encapsulated doping of n-type graphene transistors with extended air stability

ACS Nano

Volumn 6, Issue 7, 2012, Pages 6215-6221

  Ho, Po Hsun ^a   Yeh, Yun Chieh ^a   Wang, Di Yan ^a   Li, Shao Sian ^a   Chen, Hsin An ^a   Chung, Yi Hsuan ^a   Lin, Chih Cheng ^a   Wang, Wei Hua ^b   Chen, Chun Wei ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b INSTITUTE OF ATOMIC AND MOLECULAR SCIENCES   (Taiwan)

Author keywords

air stability; grapheme; n type doping of graphene and transistor; TiOx

Indexed keywords

AIR STABILITY; AIR-STABLE; AMBIENT AIR; AMORPHOUS PHASE; CRYSTALLINE-TIO; DENSITY FUNCTIONAL THEORY CALCULATIONS; DIELECTRIC SCREENING; DIRAC POINT; DOPING LAYERS; ELECTRON-DONATING; ELECTRON-DOPING; ELECTRONIC TRANSPORT; GRAPHEME; GRAPHENE TRANSISTORS; INNOVATIVE APPROACHES; N-TYPE DOPING; NON-STOICHIOMETRY; NOVEL DEVICES; RAPID DEGRADATION; SOLUTION-PROCESSED; THIN LAYERS; TIOX; TIOX THIN FILMS; TRANSPORT CHARACTERISTICS;

DEGRADATION; DENSITY FUNCTIONAL THEORY; ELECTRON MOBILITY; SEMICONDUCTOR DOPING; STABILITY; THIN FILMS; TITANIUM; TITANIUM DIOXIDE; TRANSISTORS;

GRAPHENE;

EID: 84864242041     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn301639j     Document Type: Article

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