High performance In2O3 thin film transistors using chemically derived aluminum oxide dielectric

Applied Physics Letters

Volumn 103, Issue 3, 2013, Pages

  Nayak, Pradipta K ^a   Hedhili, M N ^a   Cha, Dongkyu ^a   Alshareef, H N ^a  

^a KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Saudi Arabia)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM OXIDES; DEVICE PERFORMANCE; EFFICIENT OXIDATIONS; FIELD-EFFECT MOBILITIES; HYDROXYL GROUPS; INDIUM OXIDE THIN FILMS; TEMPERATURE RANGE; THIN-FILM DIELECTRICS;

DIELECTRIC MATERIALS; INDIUM; OXIDES; SEMICONDUCTOR DOPING; THIN FILM TRANSISTORS; THIN FILMS;

ALUMINUM;

EID: 84881508575     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4816060     Document Type: Article

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