Evolution of nanocrystalline silicon thin film transistor channel layers

Journal of Non-Crystalline Solids

Volumn 338-340, Issue 1 SPEC. ISS., 2004, Pages 720-724

  Cheng, I Chun ^a   Allen, Steven ^a   Wagner, Sigurd ^a  

^a Princeton University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; CRYSTALLINE MATERIALS; ELECTRIC FIELD EFFECTS; NANOSTRUCTURED MATERIALS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR GROWTH; SYNTHESIS (CHEMICAL);

CHANNEL LAYERS; DEFECT GENERATION; DRAIN GEOMETRY; TRANSISTOR GEOMETRY;

THIN FILM TRANSISTORS;

EID: 2942556877     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2004.03.076     Document Type: Conference Paper

References (21)

1. Gleskova H., Wagner S. IEEE Electron Dev. Lett. 20(9):1999;473.
2. Yang C.S., Smith L.L., Arthur C.V., Parsons G.N. J. Vac. Sci. Technol. B. 18(2):2000;683.
3. Carey P.G., Smith P.M., Theiss S.D., Wickboldt P. J. Vac. Sci. Technol. A. 17(4):1999;1946.
4. Gosain D.P., Noguchi T., Usui S. Jpn. J. Appl. Phys. Part 2: Lett. 39(3AB):2000;L179.
5. Inoue S., Utsunomiya S., Saeki T., Shimoda T. IEEE Trans. Electron Dev. 49(8):2002;1353.
6. Drury C.J., Mutsaers C.M., Hart C.M., Matters M., Leeuw D.M. Appl. Phys. Lett. 73(1):1998;108.
7. Kane M.G., Campi J., Hammond M.S., Cuomo F.P., Greening B., Sheraw C.D., Nichols J.A., Gundlach D.J., Huang J.R., Huang C.-C., Jia L., Klauk H., Jackson T.N. IEEE Electron Dev. Lett. 21(11):2000;534.
8. Park S.K., Kim Y.H., Han J.I., Moon D.G., Kim W.K. IEEE Trans. Electron Dev. 49(11):2002;2008.
9. Svrcek V., Pelant I., Kočka J., Fojtik P., Rezek B., Stuchlikova H., Fejfar A., Stuchlik J., Poruba A. J. Appl. Phys. 89:2001;1800.
10. Chen Y., Wagner S. Appl. Phys. Lett. 75:1999;1125.
11. Cheng I.-C., Wagner S. Appl. Phys. Lett. 80:2002;440.
12. Cheng I.-C., Wagner S., Bae S., Fonash S.J. Mater. Res. Soc. Symp. Proc. 664:2001;A26.1.
13. Tzolov M., Finger F., Carius R., Hapke P. J. Appl. Phys. 81(11):1997;7376.
14. Vallat-Sauvain E., Kroll U., Shah A., Pohl J. J. Appl. Phys. 87(6):2000;3137.
15. Mulato M., Chen Y., Wagner S., Zanatta A.R. J. Non-Cryst. Solids. 266-269:2000;1260.
16. Platz R., Wagner S. Appl. Phys. Lett. 73(9):1998;1236.
17. Alpuim P., Chu V., Conde J.P. J. Vac. Sci. Technol. A. 19:2001;2328.
18. Cheng I.-C., Wagner S. Thin Solid Films. 427:2003;56.
19. Koh J., Ferlauto A.S., Rovira P.I., Wronski C.R., Collins R.W. Appl. Phys. Lett. 75(15):1999;2286.
20. Roca i Cabarrocas P., Layadi N., Heitz T., Drevillon B., Solomon I. Appl. Phys. Lett. 66(26):1995;3609.
21. Ohmi T., Kotani K., Teramoto A., Miyashita M. IEEE Electron Dev. Lett. 12(12):1991;652.