Enhancement of electrical stability of a-IGZO TFTs by improving the surface morphology and packing density of active channel

Current Applied Physics

Volumn 13, Issue 1, 2013, Pages 246-251

  Raja, Jayapal ^a   Jang, Kyungsoo ^a   Nguyen, Hong Hanh ^a   Trinh, Thanh Thuy ^a   Choi, Woojin ^a   Yi, Junsin ^a  

^a Sungkyunkwan University   (South Korea)

Author keywords

a IGZO TFTs; Film densification; IGZO refractive index; Interface trap density; Surface roughness

Indexed keywords

A-IGZO TFTS; ACTIVE CHANNELS; CATION COMPOSITION; ELECTRICAL STABILITY; HIGH FIELD EFFECT MOBILITY; INTERFACE TRAP DENSITY; MATERIAL PROPERTY; ON-OFF RATIO; PACKING DENSITY; POWER DENSITIES; SI SUBSTRATES; SPUTTERING TECHNIQUES; SUBTHRESHOLD SWING; THIN-FILM TRANSISTOR (TFTS);

ELECTRIC PROPERTIES; REFRACTIVE INDEX; SEMICONDUCTING INDIUM COMPOUNDS; SURFACE ROUGHNESS; THIN FILM TRANSISTORS;

INTERFACES (MATERIALS);

EID: 84866135177     PISSN: 15671739     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cap.2012.07.016     Document Type: Article

References (23)

1. K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono Nature 432 2004 488 492
2. J.H. Jeong, H.W. Yang, J.S. Park, J.K. Jeong, Y.G. Mo, H.D. Kim, J. Song, and C.S. Hwang Electrochem. Solid-State Lett. 11 2008 H157 H159
3. J.K. Jeong, J.H. Jeong, H.W. Yang, J.S. Park, Y.G. Mo, and H.D. Kim Appl. Phys. Lett. 91 2007 113505-113505-3
4. B. Kim, E. Chong, D.H. Kim, Y.W. Jeon, D.H. Kim, and S.Y. Lee Appl. Phys. Lett. 99 2011 062108-062108-3
5. M. Clin, O. Durand-Drouhin, A. Zeinert, and J.C. Picot Diam. Relat. Mater. 8 1999 527 531
6. H.Z. Zhang, H.T. Cao, A.H. Chen, L.Y. Liang, Z.M. Liu, and Q. Wan Solid-State Electron. 54 2010 479 483
7. I.C. Cheng, S. Allen, and S. Wagner J. Non Cryst. Solids 338-340 2004 720 724
8. W.F. Wu, B.S. Chiou, and S.T. Hsieh Semicond. Sci. Technol. 9 1994 1242
9. T.T. Trinh, V.D. Nguyen, K. Ryu, K. Jang, W. Lee, S. Baek, J. Raja, and J. Yi Semicond. Sci. Technol. 26 2011 085012
10. L. Yuan, G. Fang, X. Zou, H. Huang, H. Zou, X. Han, Y. Gao, S. Xu, and X. Zhao J. Phys. D: Appl. Phys. 42 2009 215301
11. K.M. Karuppasamy, and A. Subrahmanyam J. Phys. D: Appl. Phys. 42 2009 095301
12. N. Martin, D. Baretti, C. Rousselot, and J.-Y. Rauch Surf. Coat. Technol. 107 1998 172 182
13. H.H.Z. Massoud, and H.M. Przewlocki Appl. Phys. Lett. 92 2002 2202 2206
14. R. Sharma, K. Sehrawat, A. Wakahara, and R.M. Mehra Appl. Surf. Sci. 255 2009 5781 5788
15. W. Yang, Z. Liu, D.L. Peng, F. Zhang, H. Huang, Y. Xie, and Z. Wu Appl. Surf. Sci. 255 2009 5669 5673
16. J.M. Lee, B.H. Choi, M.J. Ji, J.H. Park, J.H. Kwon, and B.K. Ju Semicond. Sci. Technol. 24 2009 055008
17. J.X. Wang, S.J. Kwon, and E.S. Cho Microelectron. Eng. 95 2012 107 111
18. H. Hosono J. Non Cryst. Solids 352 2006 851 858
19. M.K. Ryu, S. Yang, S.H.K. Park, C.-S. Hwang, and J.K. Jeong Appl. Phys. Lett. 95 2009 072104
20. A.C. Galca, G. Socol, and V. Craciun Thin Solid Films 520 2012 4722 4725
21. C.H. Ahn, B.H. Kong, H. Kim, and H.K. Cho J. Electrochem. Soc. 158 2011 H170 H173
22. Chih Tsung, L. Po Tsun, C. Ting Chang, W. Chen Wen, Y. Po Yu, and Y. Fon Shan IEEE Electron Device Lett. 28 2007 584 586
23. C.J. Ku, Z. Duan, P.I. Reyes, Y. Lu, Y. Xu, C.L. Hsueh, and E. Garfunkel Appl. Phys. Lett. 98 2011 123511 123513