Inkjet-printed high mobility transparent-oxide semiconductors

IEEE/OSA Journal of Display Technology

Volumn 5, Issue 12, 2009, Pages 520-524

  Han, Seung Yeol ^a   Chang, Chih Hung ^a   Lee, Doo Hyoung ^a,b   Herman, Gregory S ^c,d  

^a OREGON STATE UNIVERSITY   (United States)

^b Korea Research Institute of Chemical Technology   (South Korea)

^c HEWLETT PACKARD COMPANY   (United States)

^d SHARP LABORATORIES OF AMERICA   (United States)

Author keywords

Inkjet printing; Solution based process; Thin film transistors (TFTs); Transparent oxide semiconductors

Indexed keywords

BINARY OXIDES; CHANNEL LAYERS; DIGITAL FABRICATION; HIGH FIELD; HIGH MOBILITY; INK-JET PRINTING; METAL OXIDE SEMICONDUCTOR; OXIDE SEMICONDUCTOR; PROCESS USE; QUATERNARY COMPOUND; SEMICONDUCTING METAL OXIDES; SIMPLE METALS; SPIN-COATING PROCESS; SYNTHETIC PATHWAYS; TERNARY OXIDES; TRANSPARENT OXIDE SEMICONDUCTOR; TRANSPARENT THIN FILM; ZNO;

COATINGS; DISSOLUTION; FIELD EFFECT TRANSISTORS; INK; METALLIC COMPOUNDS; MOS DEVICES; ORGANIC SOLVENTS; OXIDES; PRINTING; SEMICONDUCTING ORGANIC COMPOUNDS; THIN FILMS; ZINC OXIDE;

THIN FILM TRANSISTORS;

EID: 70450210385     PISSN: 1551319X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JDT.2009.2024330     Document Type: Article

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