Influence of metal-MoS2 interface on MoS2 transistor performance: Comparison of Ag and Ti Contacts

ACS Applied Materials and Interfaces

Volumn 7, Issue 2, 2015, Pages 1180-1187

  Yuan, Hui ^a,b   Cheng, Guangjun ^a   You, Lin ^a   Li, Haitao ^a,b   Zhu, Hao ^a,b   Li, Wei ^a   Kopanski, Joseph J ^a   Obeng, Yaw S ^a   Hight Walker, Angela R ^a   Gundlach, David J ^a   Richter, Curt A ^a   Ioannou, Dimitris E ^b   Li, Qiliang ^b  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^b Krasnow Institute for Advanced Study   (United States)

Author keywords

2D material; Field effect transistor; Metal contact; Molybdenum disulfide; Raman spectroscopy; Transition metal dichalcogenides

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRIC ARCS; ELECTRIC FIELD EFFECTS; FIELD EFFECT TRANSISTORS; GOLD; GOLD DEPOSITS; METALS; MOLYBDENUM COMPOUNDS; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; TOPOGRAPHY; TRANSITION METALS;

CARRIER TRANSPORT EFFICIENCY; DEVICE PERFORMANCE; ELECTRICAL CHARACTERISTIC; FIELD EFFECT TRANSISTOR (FETS); METAL CONTACTS; MOLYBDENUM DISULFIDE; TRANSISTOR PERFORMANCE; TRANSITION METAL DICHALCOGENIDES;

SILVER;

EID: 84921498859     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/am506921y     Document Type: Article

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