Metal contacts on physical vapor deposited monolayer MoS2

ACS Nano

Volumn 7, Issue 12, 2013, Pages 11350-11357

  Gong, Cheng ^a   Huang, Chunming ^b   Miller, Justin ^a   Cheng, Lanxia ^a   Hao, Yufeng ^c   Cobden, David ^b   Kim, Jiyoung ^a   Ruoff, Rodney S ^c   Wallace, Robert M ^a   Cho, Kyeongjae ^a   Xu, Xiaodong ^b   Chabal, Yves J ^a  

^a The University of Texas at Dallas   (United States)

^b UNIVERSITY OF WASHINGTON   (United States)

^c The University of Texas at Austin   (United States)

Author keywords

atomic force microscopy; buffer layer; graphene; homogeneity; metal contact; molybdenum disulfide; Raman spectroscopy

Indexed keywords

CONDUCTIVE BUFFER LAYER; HOMOGENEITY; METAL CONTACTS; MOLYBDENUM DISULFIDE; PHYSICAL VAPOR DEPOSITED; SPIN-POLARIZED DENSITY FUNCTIONAL THEORY; TRANSITION METAL DICHALCOGENIDES; TWO-DIMENSIONAL SEMICONDUCTORS;

ATOMIC FORCE MICROSCOPY; BUFFER LAYERS; GOLD; GRAPHENE; METALS; MOLYBDENUM COMPOUNDS; RAMAN SPECTROSCOPY; SILVER;

PALLADIUM;

EID: 84891356833     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn4052138     Document Type: Article

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