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Applied Physics Letters

Volumn 105, Issue 22, 2014, Pages

Materials selection for oxide-based resistive random access memories

(2) Guo, Yuzheng a Robertson, John a

a UNIVERSITY OF CAMBRIDGE (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL POTENTIAL; FERMI LEVEL; HAFNIUM OXIDES; RRAM; TANTALUM; TANTALUM OXIDES; VACANCIES;

AMORPHOUS PHASE; ATOMIC PROCESS; BAND DIAGRAMS; DEFECT FORMATION ENERGIES; LATTICE REARRANGEMENT; MATERIALS SELECTION; O VACANCIES; RESISTIVE RANDOM ACCESS MEMORY;

RANDOM ACCESS STORAGE;

EID: 84915820359 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4903470 Document Type: Article

Times cited : (95)

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