A combined ab initio and experimental study on the nature of conductive filaments in Pt/HfO2/Pt resistive random access memory

IEEE Transactions on Electron Devices

Volumn 61, Issue 5, 2014, Pages 1394-1402

  Xue, Kan Hao ^a,b   Traore, Boubacar ^c   Blaise, Philippe ^c   Fonseca, Leonardo R C ^d   Vianello, Elisa ^c   Molas, Gabriel ^c   De Salvo, Barbara ^c   Ghibaudo, Gerard ^a   Magyari Kope, Blanka ^e   Nishi, Yoshio ^e  

^a Inst de Microlectron et Photonique   (France)

^b UNIVERSITÉ DE PICARDIE JULES VERNE   (France)

^c CEA LETI   (France)

^d UNIVERSITY OF CAMPINAS   (Brazil)

^e Stanford University   (United States)

Author keywords

Dielectric breakdown; electrochemical processes; hafnium compounds; metal insulator structures; nanotechnology; semiconductor memories.

Indexed keywords

ELECTRIC BREAKDOWN; ELECTROFORMING; ELECTRON EMISSION; HAFNIUM COMPOUNDS; HAFNIUM OXIDES; METAL INSULATOR BOUNDARIES; NANOTECHNOLOGY; OXYGEN SUPPLY; OXYGEN VACANCIES; SEMICONDUCTOR STORAGE;

AB INITIO CALCULATIONS; CONDUCTIVE FILAMENTS; ELECTROCHEMICAL PROCESS; HIGH TEMPERATURE; METAL INSULATORS; OXYGEN INTERSTITIALS; RESISTIVE RANDOM ACCESS MEMORY; SEMICONDUCTOR MEMORY;

CALCULATIONS;

EID: 84899672907     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2014.2312943     Document Type: Article

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