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Volumn 104, Issue 11, 2014, Pages

Oxygen vacancy defects in Ta2O5 showing long-range atomic re-arrangements

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE STATE; CONDUCTION BAND EDGE; FORMATION ENERGIES; INTRA-LAYER; LOW OXYGEN; OXYGEN VACANCY DEFECTS; PHASE MODEL; RESISTIVE RANDOM ACCESS MEMORY;

EID: 84897888726     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4869553     Document Type: Article
Times cited : (50)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.