Defect densities inside the conductive filament of RRAMs

Microelectronic Engineering

Volumn 109, Issue , 2013, Pages 208-210

  Robertson, J ^a   Gillen, R ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

Conductive filament; Oxygen vacancies; RRAM; Theory

Indexed keywords

CONDUCTIVE FILAMENTS; LOCAL DENSITY; LOCALISED; RESISTIVE RANDOM ACCESS MEMORY (RRAM); RRAM; THEORY; VACANCY DEFECTS;

OXYGEN VACANCIES;

RANDOM ACCESS STORAGE;

EID: 84876860247     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2013.03.010     Document Type: Article

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