First principles study of oxygen vacancy defects in tantalum pentoxide

Journal of Applied Physics

Volumn 94, Issue 9, 2003, Pages 5609-5612

  Ramprasad, R ^a  

^a MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; CRYSTALLINE MATERIALS; ENERGY GAP; FERMI LEVEL; OXYGEN; PERMITTIVITY; PROBABILITY DENSITY FUNCTION;

ORTHORHOMBIC PHASES; VACANCY DEFECTS;

TANTALUM COMPOUNDS;

EID: 0242468585     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1615700     Document Type: Article

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