Improved switching uniformity and low-voltage operation in TaO x-based RRAM using Ge reactive layer

IEEE Electron Device Letters

Volumn 34, Issue 9, 2013, Pages 1130-1132

  Zhuo, Victor Yi Qian ^a,b   Jiang, Yu ^a   Zhao, Rong ^c   Shi, Lu Ping ^d   Yang, Yi ^a   Chong, Tow Chong ^c   Robertson, John ^b  

^a DATA STORAGE INSTITUTE   (Singapore)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^c SINGAPORE UNIVERSITY OF TECHNOLOGY AND DESIGN   (Singapore)

^d TSINGHUA UNIVERSITY   (China)

Author keywords

Resistive random access memory (RRAM); TaOx; uniformity

Indexed keywords

FILAMENTARY SWITCHING; LOW VOLTAGE OPERATION; RESISTIVE RANDOM ACCESS MEMORY; RESISTIVE RANDOM ACCESS MEMORY (RRAM); RESISTIVE SWITCHING DEVICES; SWITCHING PARAMETERS; TAOX; UNIFORMITY;

ELECTRIC FIELDS; SWITCHING SYSTEMS; X RAY SPECTROSCOPY;

GERMANIUM;

EID: 84883191574     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2013.2271545     Document Type: Article

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