Oxygen vacancy levels and electron transport in Al2 O 3

Applied Physics Letters

Volumn 96, Issue 3, 2010, Pages

  Liu, D ^a   Clark, S J ^b   Robertson, J ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b DURHAM UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE STATE; CONDUCTION BAND EDGE; ELECTRON HOPPING; ELECTRON TRANSPORT; ENERGY LEVEL; OXIDE VALENCE BAND; OXYGEN VACANCY LEVEL; TRAPPING LEVELS;

CONDUCTION BANDS; ELECTRON MOBILITY; ELECTRONS; HAFNIUM COMPOUNDS; OXYGEN;

OXYGEN VACANCIES;

EID: 77949819604     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3293440     Document Type: Article

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