Growth temperature induced physical property variation of InN films grown on nitrided sapphire substrate by PAMBE

Vacuum

Volumn 112, Issue , 2015, Pages 55-58

  Zhao, Yang ^a   Wang, Hui ^b   Yang, Hang ^a   Wu, Guoguang ^a   Jing, Qiang ^a   Gao, Fubin ^a   Li, Wancheng ^a   Zhang, Baolin ^a   Du, Guotong ^a,c  

^a JILIN UNIVERSITY   (China)

^b HENAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^c DALIAN UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

Growth temperature; Indium nitride; PAMBE; Photoluminescence

Indexed keywords

EPILAYERS; INDIUM; LIGHT ABSORPTION; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; PLASMA APPLICATIONS; SAPPHIRE; SUBSTRATES;

C-AXIS DIRECTION; INDIUM NITRIDE; INFRARED EMISSIONS; OPTICAL ABSORPTION MEASUREMENT; PAMBE; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; SAPPHIRE SUBSTRATES; TEMPERATURE-INDUCED;

GROWTH TEMPERATURE;

EID: 84913554717     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2014.11.016     Document Type: Article

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