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Volumn 513, Issue , 2012, Pages 6-9
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Indium flux, growth temperature and RF power induced effects in InN layers grown on GaN/Si substrate by plasma-assisted MBE
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Author keywords
Indium nitride; Luminescence; MBE; X ray diffraction
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Indexed keywords
ATOMIC FORCE MICROSCOPY;
EPILAYERS;
GALLIUM NITRIDE;
GROWTH TEMPERATURE;
III-V SEMICONDUCTORS;
LIGHT ABSORPTION;
LUMINESCENCE;
MOLECULAR BEAM EPITAXY;
SEMICONDUCTING FILMS;
SEMICONDUCTOR QUANTUM WELLS;
SILICON COMPOUNDS;
SINGLE CRYSTALS;
SURFACE ROUGHNESS;
X RAY DIFFRACTION;
X RAY DIFFRACTION ANALYSIS;
ZINC SULFIDE;
BEAM EQUIVALENT PRESSURE;
HIGH-RESOLUTION X-RAY DIFFRACTION;
INDIUM NITRIDE;
MORPHOLOGICAL PROPERTIES;
OPTICAL ABSORPTION MEASUREMENT;
PLASMA ASSISTED MBE;
PLASMA-ASSISTED MOLECULAR BEAM EPITAXY;
SUBSTRATE TEMPERATURE;
INDIUM COMPOUNDS;
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EID: 83555174882
PISSN: 09258388
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jallcom.2011.10.009 Document Type: Letter |
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Times cited : (9)
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References (18)
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