On the crystalline structure, stoichiometry and band gap of InN thin films

Applied Physics Letters

Volumn 86, Issue 7, 2005, Pages 1-3

  Yu, K M ^a   Liliental Weber, Z ^a   Walukiewicz, W ^a   Shan, W ^a   Ager III, J W ^a   Li, S X ^c   Jones, R E ^c   Haller, E E ^c   Lu, Hai ^b   Schaff, William J ^b  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^b Cornell University   (United States)

^c NONE

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAP; DIFFRACTION PATTERNS; DISLOCATION DENSITIES; NONOPTIMAL FILMS; NUCLEATION LAYER;

CRYSTAL STRUCTURE; FILM GROWTH; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING INDIUM COMPOUNDS; SINGLE CRYSTALS; STOICHIOMETRY; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

THIN FILMS;

EID: 20144389563     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1861513     Document Type: Article

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