Near infrared electroluminescence from n-InN/p-GaN light-emitting diodes

Applied Physics Letters

Volumn 100, Issue 10, 2012, Pages

  Wu, Guo Guang ^a   Li, Wan Cheng ^a   Shen, Chun Sheng ^a   Gao, Fu Bin ^a   Liang, Hong Wei ^b   Wang, Hui ^c   Song, Li Jun ^b   Du, Guo Tong ^a  

^a JILIN UNIVERSITY   (China)

^b DALIAN UNIVERSITY OF TECHNOLOGY   (China)

^c HENAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BAND-EDGE EMISSIONS; EL EMISSION PEAK; FORWARD BIAS; HETEROJUNCTION STRUCTURES; INN FILMS; INN THIN FILMS; NEAR INFRA RED; NIR EMISSION; OPTICAL COMMUNICATION WAVELENGTH; PHOTOLUMINESCENCE SPECTRUM;

ELECTRIC RECTIFIERS; GALLIUM NITRIDE; HETEROJUNCTIONS; INFRARED DEVICES; LIGHT EMISSION; LIGHT EMITTING DIODES; MOLECULAR BEAM EPITAXY;

ELECTROLUMINESCENCE;

EID: 84863357349     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3693150     Document Type: Article

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