The influence of the LT-InN buffer growth conditions on the quality of InN films grown on Si(1 1 1) substrate by MBE

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 41, Issue 5, 2009, Pages 848-851

  Wang, Yan Hsin ^a   Chen, Wei Li ^a  

^a NATIONAL CHANGHUA UNIVERSITY OF EDUCATION   (Taiwan)

Author keywords

Atomic force microscope; InN; Molecular beam epitaxy; Photoluminescence; X ray diffraction

Indexed keywords

ATOMIC FORCE MICROSCOPY; ATOMS; BUFFER LAYERS; CRYSTAL GROWTH; CRYSTALLINE MATERIALS; DIFFRACTION; EPITAXIAL LAYERS; FILM GROWTH; MICROSCOPES; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; OPTICAL PROPERTIES; OPTICAL WAVEGUIDES; PHOTOLUMINESCENCE; PLASMA DIAGNOSTICS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR QUANTUM WIRES; SINGLE CRYSTALS; SUBSTRATES; THERMAL EFFECTS; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS; ZINC SULFIDE;

AFM; ATOMIC FORCE MICROSCOPE; BAND EDGES; BUFFER GROWTHS; CRYSTALLINE QUALITIES; DISLOCATION DENSITIES; GROWTH CONDITIONS; HIGH-RESOLUTION X-RAY DIFFRACTIONS; INCLINATION ANGLES; INN; INN FILMS; LOW TEMPERATURES; PLASMA-ASSISTED MOLECULAR-BEAM EPITAXIES; RMS ROUGHNESS; SI (1 1 1); THREADING DISLOCATIONS; WURTZITE; XRD; XRD STUDIES;

OPTICAL FILMS;

EID: 61649095136     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2009.01.005     Document Type: Article

References (16)

1. Nanishi Y., Saito Y., Yamaguchi T., Araki T., Miyajima T., and Naoi H. Phys. Status Solidi C 6 (2004) 1487
2. Nanishi Y., Saito Y., and Yamaguchi T. Jpn. J. Appl. Phys. 42 (2003) 2549
3. Wu C.-L., Shen C.-H., Chen H.-Y., Tsai S.-J., Lin H.-W., Lee H.-M., Gwo S., Chuang T.-F., Chang H.-S., and Hsu T.-M. J. Cryst. Growth 288 (2006) 247
4. Lu H., Schaff W.J., Eastman L.F., Wu J., Walukiewicz W., Look D.C., and Molnar R.J. Mater. Res. Soc. Symp. Proc. 743 (2003) 317
5. Saito Y., Harima H., Kurimoto E., Yamaguchi T., Teraguchi N., Suzuki A., Araki T., and Nanishi Y. Phys. Status Solidi B 234 (2002) 796
6. Yamaguchi T., Kurouchi M., Naoi H., Suzuki A., Araki T., and Nanishi Y. J. Cryst. Growth 275 (2005) 1321
7. Williamson G.K., and Hall W.H. Acta Metall. 1 (1953) 22
8. Gay P., Hirsch P.B., and Kelly A. Acta Metall. 1 (1953) 315
9. Chierchia R., Bottcher T., Heinke H., Einfeldt S., Figge S., and Hommel D. J. Appl. Phys. 93 (2003) 8918
10. Srikant V., Speck J.S., and Clarke D.R. J. Appl. Phys. 82 (1997) 4286
11. Son K.S., Kim D., Cho H.K., Lee K., Kim S., and Park K. J. Cryst. Growth 261 (2004) 50
12. Davydov V.Yu., Klochikhin A.A., Seisyan R.P., Emtsev V.V., Ivanov S.V., Bechstedt F., Furthmuller J., Harima H., Mudryi A.V., Aderhold J., Semchinova O., and Graul J. Phys. Status Solidi B 229 (2002) R1
13. Davydov V.Yu., Klochikhin A.A., Emtsev V.V., Kurdyukov D.A., Ivanov S.V., Vekshin V.A., Bechstedt F., Furthmuller J., Aderhold J., Graul J., Mudryi A.V., Harima H., Hashimoto A., Yamamoto A., and Haller E.E. Phys. Status Solidi B 234 (2002) 787
14. Wu J., Walukiewicz W., Yu K.M., Ager III J.W., Haller E.E., Lu H., and Schaff W.J. Appl. Phys. Lett. 80 (2002) 4741
15. Klochikhin A.A., Davydov V.Yu., Emtsev V.V., Sakharov A.V., Kapitonov V.A., Andreev B.A., Lu H., and Schaff W.J. Phys. Rev. B 71 (2005) 195207
16. Gwo S., Wu C.-L., Shen C.-H., Chang W.-H., Hsu T.M., Wang J.-S., and Hsu J.-T. Appl. Phys. Lett. 84 (2004) 3765