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Volumn 36, Issue 4-6, 2004, Pages 537-545
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Structural and optical characterisation of InN layers grown by MOCVD
c
EPFL
(Switzerland)
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Author keywords
[No Author keywords available]
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Indexed keywords
ATOMIC FORCE MICROSCOPY;
CARRIER CONCENTRATION;
CARRIER MOBILITY;
CRYSTAL STRUCTURE;
ENERGY GAP;
FILM GROWTH;
HALL EFFECT;
METALLORGANIC CHEMICAL VAPOR DEPOSITION;
OPTICAL PROPERTIES;
PHOTOLUMINESCENCE;
SURFACE ROUGHNESS;
THICKNESS MEASUREMENT;
THIN FILMS;
TRANSMISSION ELECTRON MICROSCOPY;
X RAY DIFFRACTION ANALYSIS;
HALL MOBILITY;
INN;
ROOM TEMPERATURE;
INDIUM COMPOUNDS;
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EID: 9944248536
PISSN: 07496036
EISSN: None
Source Type: Journal
DOI: 10.1016/j.spmi.2004.10.002 Document Type: Article |
Times cited : (31)
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References (8)
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