Green gap spectral range light-emitting diodes with self-assembled InGaN quantum dots formed by enhanced phase separation

Applied Physics Express

Volumn 4, Issue 4, 2011, Pages

  Park, Il Kyu ^a   Park, Seong Ju ^b  

^a Yeungnam University   (South Korea)

^b Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EMISSION WAVELENGTH; GAN LAYERS; INGAN QUANTUM DOTS; POTENTIAL WELLS; RED-SHIFTED; SELF-ASSEMBLED; SPECTRAL RANGE; STRUCTURAL AND OPTICAL PROPERTIES;

GALLIUM NITRIDE; LIGHT EMISSION; OPTICAL PROPERTIES; ORGANIC CHEMICALS; ORGANIC LIGHT EMITTING DIODES (OLED); PHASE SEPARATION; SEMICONDUCTOR QUANTUM DOTS; SURFACE PROPERTIES; SURFACE ROUGHNESS;

LIGHT EMITTING DIODES;

EID: 79954427067     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.4.042102     Document Type: Article

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